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MD1803DFX

P1-P3P4-P6P7-P9P10-P10
September 2006 Rev 6 1/10
10
MD1803DFX
High voltage NPN Power transistor for standard definition CRT
display
Features
■ State-of-the-art technology:
– Diffused collector “enhanced generation”
■ More stable performance versus operating
temperature variation
■ Low base drive requirement
■ Tighter h
FE
range at operating collector current
■ Fully insulated power package U.L. compliant
■ Integrated free wheeling diode
■ In compliance with the 2002/93/EC european
directive
Applications
■ Horizontal deflection output for TV
Description
The MD1803DFX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
Order codes
Internal schematic diagram
1
2
3
ISOWATT218FX
R
BE
=60Ω typ.
Part number Marking Package Packing
MD1803DFX MD1803DFX ISOWATT218FX TUBE
www.st.com
Electrical ratings MD1803DFX
2/10
1 Electrical ratings
Table 1. Absolute maximum rating
Table 2. Thermal data
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0)
1500 V
V
CEO
Collector-emitter voltage (I
B
= 0)
700 V
V
EBO
Emitter-base voltage (I
C
= 0)
10 V
I
C
Collector current 10 A
I
CM
Collector peak current (t
P
< 5ms)
15 A
I
B
Base current 5 A
P
TOT
Total dissipation at T
c
= 25°C
57 W
V
isol
Insulation withstand voltage (rms) from all three leads to external
heatsink
2500 V
T
stg
Storage temperature
-65 to 150
150
°C
T
J
Max. operating junction temperature
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ____________________Max 2.2 °C/W
MD1803DFX Electrical characteristics
3/10
2 Electrical characteristics
(T
CASE
= 25°C; unless otherwise specified)
Table 3. Electrical characteristics
1 Pulsed duration = 300 µs, duty cycle ≤ 1.5%.
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 1500V
V
CE
= 1500V T
c
= 125°C
0.2
2
mA
mA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5V
40 120 mA
V
(BR)EBO
Emitter-base breakdown voltage
(I
C
= 0)
I
E
= 700 mA
10 V
V
CE(sat)
Note 1
Collector-emitter saturation
voltage
I
C
= 5 A I
B
= 1.25 A
2V
V
BE(sat)
Note 1
Base-emitter saturation voltage
I
C
= 5 A I
B
= 1.25 A
1.2 V
h
FE
Note 1
DC current gain
I
C
= 1 A V
CE
= 5 V
I
C
= 5 A V
CE
= 1 V
I
C
= 5 A V
CE
= 5 V
5.5
18
5
7.5
V
f
Diode forward voltage
I
F
= 5 A
1.6 V
t
s
t
f
Inductive load
Storage time
Fall time
I
C
= 4A ___ _ _ f
h
= 16KHz
I
B(on)
= 0.6A__ V
BE(off)
= -2.7V
L
BB(off)
= 4.5µH
2.5
0.3
3
0.6
µs
µs
P1-P3P4-P6P7-P9P10-P10

MD1803DFX

Mfr. #:
Buy MD1803DFX
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - Pre-Biased HI VLT NPN PWR TRANS STANDARD DEF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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