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AD8643TRZ-EP-R7

P1-P3P4-P6P7-P9P10-P12
Low Power, Rail-to-Rail,
Output Precision JFET Amplifier
AD8643-EP
Rev. 0
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2011 Analog Devices, Inc. All rights reserved.
FEATURES
Low supply current: 250 μA maximum
Very low input bias current: 1 pA maximum
Low offset voltage: 750 μV maximum
Single-supply operation: 5 V to 26 V
Dual-supply operation: ±2.5 V to ±13 V
Rail-to-rail output
Unity-gain stable
No phase reversal
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications
(AQEC standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Line-/battery-powered instruments
Photodiode amplifiers
Precision current sensing
Precision filters
Portable audio
PIN CONFIGURATION
OUT A
1
OUT D
14
–IN A
2
–IN D
13
+IN A
3
+IN D
12
V+
4
V–
11
+IN B
5
+IN C
10
–IN B
6
–IN C
9
OUT B
7
OUT C
8
TOP VIEW
(Not to Scale)
AD8643-EP
09590-103
Figure 1. 14-Lead SOIC (R-14)
GENERAL DESCRIPTION
The AD8643-EP is a low power, precision JFET input amplifier
featuring extremely low input bias current and rail-to-rail output.
The ability to swing nearly rail-to-rail at the input and rail-to-rail at
the output enables designers to buffer CMOS digital-to-analog
converters (DACs), ASICs, and other wide output swing devices
in single-supply systems. The outputs remain stable with capacitive
loads of more than 500 pF.
The AD8643-EP is suitable for applications using multichannel
boards that require low power to manage heat. Other applications
include photodiodes and battery management.
The AD8643-EP is fully specified over the military temperature
range of −55°C to +125°C. This device is available in a 14-lead SOIC.
Additional applications information is available in the AD8643
data sheet.
AD8643-EP
Rev. 0 | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications....................................................................................... 1
Pin Configuration............................................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics..............................................................3
Absolute Maximum Ratings ............................................................5
Thermal Resistance.......................................................................5
ESD Caution...................................................................................5
Typical Performance Characteristics ..............................................6
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
1/11—Revision 0: Initial Version
AD8643-EP
Rev. 0 | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
S
= 5.0 V, V
CM
= 2.5 V, T
A
= 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
50 1000 μV
−55°C < T
A
< +85°C 1.8 mV
+85°C < T
A
< +125°C, V
CM
= 1.5 V 1.9 mV
Input Bias Current I
B
0.25 1 pA
−55°C < T
A
< +125°C 180 pA
Input Offset Current I
OS
0.5 pA
−55°C < T
A
< +125°C 60 pA
Input Voltage Range 0 3 V
Common-Mode Rejection Ratio CMRR V
CM
= 0 V to 2.5 V 74 93 dB
Large Signal Voltage Gain A
VO
R
L
= 10 kΩ, V
O
= 0.5 to 4.5 V 80 140 V/mV
Offset Voltage Drift ΔV
OS
/ΔT −55°C < T
A
< +125°C 2.5 μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
OH
4.95 V
I
L
= 1 mA, −55°C to +125°C 4.94 V
Output Voltage Low V
OL
0.05 V
I
L
= 1 mA, −55°C to +125°C 0.01 0.05 V
Output Current I
OUT
±6 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= 5 V to 26 V 90 107 dB
Supply Current/Amplifier I
SY
195 250 μA
−55°C < T
A
< +125°C 270 μA
DYNAMIC PERFORMANCE
Slew Rate SR 2 V/μs
Gain Bandwidth Product GBP 2.5 MHz
Phase Margin Ø
m
50 Degrees
NOISE PERFORMANCE
Voltage Noise e
N
p-p f = 0.1 Hz to 10 Hz 4.0 μV p-p
Voltage Noise Density e
N
f = 1 kHz 28.5 nV/√Hz
Current Noise Density i
N
f = 1 kHz 0.5 fA/√Hz
P1-P3P4-P6P7-P9P10-P12

AD8643TRZ-EP-R7

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Analog Devices Inc.
Description:
Precision Amplifiers Low Pwr RRO Prec JFET Quad
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