1
Features
• Single-voltage Operation
–5V Read
– 5V Programming
• Fast Read Access Time – 70 ns
• Internal Erase/Program Control
• Sector Architecture
– One 8K Word (16K Bytes) Boot Block with Programming Lockout
– Two 4K Word (8K Bytes) Parameter Blocks
– One 496K Word (992K Bytes) Main Memory Array Block
• Fast Sector Erase Time – 10 seconds
• Byte-by-byte or Word-by-word Programming – 10 µs Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49F008A(T) and AT49F8192A(T) are 5-volt, 8-megabit Flash memories orga-
nized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured
with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times
to 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standby
current is less than 100 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49F008A/8192A locates the boot block at lowest
order addresses (“bottom boot”); the AT49F008AT/8192AT locates it at highest order
addresses (“top boot”).
To allow for simple in-system reprogrammability, the AT49F008A(T)/8192A(T) does
not require high-input voltages for programming. Reading data out of the device is
similar to reading from an EPROM; it has standard CE
, OE and WE inputs to avoid
bus contention. Reprogramming the AT49F008A(T)/8192A(T) is performed by first
erasing a block of data and then programming on a byte-by-byte or word-by-word
basis.
8-megabit
(1M x 8/
512K x 16)
Flash Memory
AT49F008A
AT49F008AT
AT49F8192A
AT49F8192AT
Rev. 1199G–FLASH–11/02
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET Reset
RDY/BUSY
Ready/Busy Output
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC No Connect
