MBRB2515LG

© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
1 Publication Order Number:
MBRB2515L/D
MBRB2515L
Preferred Device
SWITCHMODEt
Power Rectifier
ORing Function Diode
D
2
PAK Surface Mount Power Package
The D
2
PAK Power Rectifier employs the Schottky Barrier principle
in a large metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use in low voltage, high frequency
switching power supplies, free wheeling diodes, and polarity
protection diodes.
Features
Guardring for Stress Protection
Low Forward Voltage
100°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared
Similar in Size to the Industry Standard TO−220 Package
Pb−Free Packages are Available
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
15 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 90°C)
I
F(AV)
25 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave,
20 kHz, T
C
= 100°C)
I
FRM
30 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature T
J
100 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 15 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
1
3
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
D
2
PAK
CASE 418B
STYLE 3
3
4
1
MARKING DIAGRAM
B2515LG
AKA
A = Assembly Location
Y = Year
WW = Work Week
B2515L = Device Code
G = Pb−Free Package
AKA = Diode Polarity
AY WW
MBRB2515L
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
1.0
50
°C/W
1. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 19 Amps, T
J
= 70°C)
(i
F
= 25 Amps, T
J
= 70°C)
(i
F
= 25 Amps, T
J
= 25°C)
v
F
0.38
0.42
0.45
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 70°C)
(Rated dc Voltage, T
J
= 25°C)
I
R
200
15
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
MBRB2515L D
2
PAK 50 Units / Rail
MBRB2515LG D
2
PAK
(Pb−Free)
50 Units / Rail
MBRB2515LT4 D
2
PAK 800 Units / Tape & Reel
MBRB2515LT4G D
2
PAK
(Pb−Free)
800 Units / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Leakage Current
Figure 3. Typical Forward Power Dissipation Figure 4. Current Derating, Case
0.30
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
50
7.0
2.0
5.0
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
0
0.2
0.02
0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
25
10
5.0
0
T
C
, CASE TEMPERATURE (°C)
6560
40
30
20
10
0
70
i
F
, INSTANTANEOUS FORWARD CURRENT (AMP
S
I
P
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
0.7
0.5
0.3
0.1 0.2 0.4 4.0 8.0 12
16
0.1
1.0
10 20 30 40 75 80 100
0.2
0.1
0.5 20
, REVERSE LEAKAGE CURRENT (mA)
R
2.0
10
20
100
200
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
F(AV)
SQUARE WAVE
dc
SQUARE
WAVE
dc
T
J
= 25°C
70°C
T
J
= 100°C
3.0
0.01
25°C
20
15
30
40
35
35
25
15
5.0
85 90 95
70°C
RATED VOLTAGE APPLIED
R
q
JC
= 1°C/W
10
20
30
5.0 15 25 35
p
5.0
T
J
= 70°C
I
PK
I
AV
+ 10
2.0 6.0 10
14
18
1000
400
40
4.0
0.4
0.04
MBRB2515L
http://onsemi.com
3
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B−04
ISSUE J
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.035 0.51 0.89
E 0.045 0.055 1.14 1.40
G 0.100 BSC 2.54 BSC
H 0.080 0.110 2.03 2.79
J 0.018 0.025 0.46 0.64
K 0.090 0.110 2.29 2.79
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F 0.310 0.350 7.87 8.89
L 0.052 0.072 1.32 1.83
M 0.280 0.320 7.11 8.13
N 0.197 REF 5.00 REF
P 0.079 REF 2.00 REF
R 0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE
R
N P
U
VIEW W−W VIEW W−W VIEW W−W
123
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
17.02
0.67
10.66
0.42
3.05
0.12
5.08
0.20
ǒ
mm
inches
Ǔ
SCALE 3:1

MBRB2515LG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 25A 15V Low Vf
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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