IRLR/U3715
2 www.irf.com
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
––– 0.9 1.3 V T
J
= 25°C, I
S
= 21A, V
GS
= 0V
––– 0.8 ––– T
J
= 125°C, I
S
= 21A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 37 56 ns T
J
= 25°C, I
F
= 21A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 28 42 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 38 57 ns T
J
= 125°C, I
F
= 21A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 30 45 nC di/dt = 100A/µs
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 110 mJ
I
AR
Avalanche Current ––– 21 A
Avalanche Characteristics
S
D
G
Diode Characteristics
54
210
A
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 26 ––– ––– SV
DS
= 10V, I
D
= 21A
Q
g
Total Gate Charge ––– 11 17 I
D
= 21A
Q
gs
Gate-to-Source Charge ––– 3.8 ––– nC V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 4.4 ––– V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 11 17 V
GS
= 0V, V
DS
= 10V
t
d(on)
Turn-On Delay Time ––– 6.4 ––– V
DD
= 10V
t
r
Rise Time ––– 73 ––– I
D
= 21A
t
d(off)
Turn-Off Delay Time ––– 12 ––– R
G
= 1.8Ω
t
f
Fall Time ––– 5.1 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 1060 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 700 ––– V
DS
= 10V
C
rss
Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz
V
SD
Diode Forward Voltage
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– VV
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 11 14 V
GS
= 10V, I
D
= 26A
––– 15 20 V
GS
= 4.5V, I
D
= 21A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 16V, V
GS
= 0V
––– ––– 100 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -16V
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
