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IL213AT

P1-P3P4-P6P7-P7
IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Dec-10
1
Document Number: 83615
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8 Package
DESCRIPTION
The IL211AT, IL212AT, IL213AT are optically coupled pairs
with a gallium arsenide infrared LED and silicon NPN
phototransistor. Signal information, including a DC level,
can be transmitted by the device while maintaining a high
degree of electrical isolation between input and output.
The IL211AT, IL212AT, IL213AT comes in a standard
SOIC-8 small outline package for surface mounting which
makes it ideally suited for high density applications with
limited space. In addition to eliminating through-holes
requirements, this package conforms to standards for
surface mounted devices.
A choice of 20 %, 50 %, and 100 % minimum CTR at
I
F
= 10 mA makes these optocouplers suitable for a variety
of different applications.
FEATURES
• Isolation test voltage, 4000 V
RMS
• Industry standard SOIC-8 surface mountable
package
• Compatible with dual wave, vapor phase and IR
reflow soldering
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)
(1)
• DIN EN 60747-5-5 (pending)
(1)
Note
(1)
Available upon request, as option 1
i179002-1
1
2
3
4
A
K
NC
NC
8
7
6
5
NC
B
C
E
V
DE
i179025
ORDERING INFORMATION
IL21#AT
PART NUMBER
AGENCY CERTIFIED/PACKAGE
CTR (%)
10 mA
UL, cUL > 20 > 50 > 100
SOIC-8
IL211AT IL212AT IL213AT
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6V
Forward continuous current I
F
60 mA
Power dissipation P
diss
90 mW
Derate linearly from 25 °C 1.2 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
30 V
Emitter collector breakdown voltage BV
ECO
7V
Collector base breakdown voltage V
CBO
70 V
I
CMAX. DC
I
CMAX. DC
50 mA
I
CMAX.
t < 1 ms I
CMAX.
100 mA
Power dissipation P
diss
150 mW
Derate linearly from 25 °C 2mW/°C
SOIC-8
6.1 mm
IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Dec-10
2
Document Number: 83615
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage V
ISO
4000 V
RMS
Total package dissipation LED and detector P
tot
240 mW
Derate linearly from 25 °C 3.2 mW/°C
Storage temperature T
stg
-55 to +150 °C
Operating temperature T
amb
-55 to +100 °C
Soldering time at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
-1.31.5V
Reverse current V
R
= 6 V I
R
- 0.1 100 μA
Capacitance V
R
= 0 V C
O
-13-pF
OUTPUT
Collector emitter breakdown voltage I
C
= 10 μA BV
CEO
30 - - V
Emitter collector breakdown voltage I
E
= 10 μA BV
ECO
7--V
Collector dark current V
CE
= 10 V I
CEO
- 5 50 nA
Collector emitter capacitance V
CE
= 0 V C
CE
-10 pF
COUPLER
Saturation voltage, collector emitter I
F
= 10 mA V
CEsat
--0.4V
Isolation test voltage 1 s V
ISO
4000 - - V
RMS
Capacitance (input to output) C
IO
-0.550pF
Resistance (input to output) R
IO
-100-GΩ
Collector emitter breakdown voltage I
C
= 10 μA BV
CEO
30 - - V
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio I
F
= 10 mA, V
CE
= 5 V
IL211AT CTR 20 50 - %
IL212AT CTR 50 80 - %
IL213AT CTR 100 130 - %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Switching time
I
C
= 2 mA, R
L
= 100 Ω,
V
CC
= 10 V
t
on
, t
off
-3-μs
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
IL211AT, IL212AT, IL213AT
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Dec-10
3
Document Number: 83615
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “Safe Electrical Insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Collector Current vs. Collector Emitter Voltage
(non-saturated)
Fig. 3 - Leakage Current vs. Ambient Temperature
Fig. 4 - Collector Current vs. Collector Emitter Voltage
(saturated)
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification According to IEC 68 part 1 - 55 / 100 / 21 -
Comparative tracking index CTI 175 - 399
V
IOTM
6000 - - V
V
IORM
560 - - V
P
SO
- - 350 mW
I
SI
- - 150 mA
T
SI
- - 165 °C
Creepage distance 4 - - mm
Clearance distance 4 - - mm
Insulation thickness 0.2 - - mm
V
F
- Forward Voltage (V)
I
F
- Forward Current (mA)
22462
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1 1 10 100
T
amb
= 0 °C
T
amb
= 25 °C
T
amb
= 50 °C
T
amb
= 75 °C
T
amb
= 100 °C
T
amb
= - 40 °C
T
amb
= - 55 °C
22463
I
C
- Collector Current (mA)
V
CE
- Collector Emitter Voltage (NS) (V)
012345678
0
5
10
15
20
25
30
35
40
45
50
I
F
= 30 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
22466
I
CE0
- Leakage Current (nA)
T
amb
- Ambient Temperature (°C)
0.001
0.01
0.1
1
10
100
1000
10 000
- 60 - 40 - 20 0 20 40 60 80 100
I
F
= 0 mA
V
CE
= 40 V
V
CE
= 12 V
V
CE
= 24 V
22464
I
C
- Collector Current (mA)
V
CE
- Collector Emitter Voltage (sat) (V)
0 0.1 0.2 0.3 0.4
0
5
10
15
20
25
30
I
F
= 25 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 2 mA
I
F
= 1 mA
P1-P3P4-P6P7-P7

IL213AT

Mfr. #:
Buy IL213AT
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR >100%
Lifecycle:
New from this manufacturer.
Delivery:
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