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VS-ST1280C06K0L

P1-P3P4-P6P7-P8
VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 18-Dec-13
4
Document Number: 93718
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600
30˚
60˚
90˚
120˚
180˚
Conduction Angle
ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Average On-state current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500
DC
30˚
60˚
90˚
120˚
180˚
Conduction Period
ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500 3000
30˚
60˚
90˚
120˚
180˚
Conduction Angle
ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 1000 2000 3000 4000 5000
DC
30˚
60˚
90˚
120˚
180˚
Conduction Period
ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
400
800
1200
1600
2000
2400
2800
3200
3600
0 500 1000 1500 2000 2500 3000
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Angle
ST1280C..K Series
T = 125˚C
J
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 1000 2000 3000 4000 5000
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Period
ST1280C..K Series
T = 125˚C
J
VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 18-Dec-13
5
Document Number: 93718
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
15000
20000
25000
30000
35000
40000
110100
Initial T = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST1280C..K Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
15000
20000
25000
30000
35000
40000
45000
0.01 0.1 1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST1280C..K Series
Initial T = 125 ˚C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
100000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25˚C
J
T = 125˚C
J
ST1280C..K Series
VS-ST1280C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 18-Dec-13
6
Document Number: 93718
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VG D
IG D
(
b
)
(
a
)
Tj=25 °
C
Tj=125 °C
Tj=-40 °C
(
1
)
(2) (3)
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
Rectan
g
ular
g
ate pulse
a
)
Recommended load line for
b
)
Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Device: ST1280C..K Series
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95081
- Thyristor
1
- Vishay Semiconductors product
2
- Essential part number
3
- 0 = Converter grade
4
- C = Ceramic PUK
9
8
- Critical dV/dt:
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- K = PUK case A-24 (K-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 128 0 C 06 K 1 -
P1-P3P4-P6P7-P8

VS-ST1280C06K0L

Mfr. #:
Buy VS-ST1280C06K0L
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 2310 Amp 600 Volt 4150 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
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