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SI4866BDY-T1-E3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4866BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
25 °C
150 °C
- 0.5
- 0.3
- 0.1
0.1
0.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.004
0.008
0.012
0.016
0.020
012345
I
D
= 12 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
25 °C
125 °C
0.001
0
1
200
80
120
100.01
Time (s)
40
160
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
- Drain Current (A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 ms
10 ms
100 ms
DC
10 s
0.1 1 10
10
T
A
= 25 °C
Single Pulse
1 s
Limited by R
DS(on)*
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
5
Vishay Siliconix
Si4866BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
5
10
15
20
25
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Foot
0
1
2
3
4
5
6
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4866BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70341
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
100001110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P10

SI4866BDY-T1-E3

Mfr. #:
Buy SI4866BDY-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 12V 21.5A 8-SOIC
Lifecycle:
New from this manufacturer.
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