RN2110MFV, RN2111MFV
2016-09-14
1. BASE
2. EMITTER
3. COLLECTOR
VESM
1.2±0.05
0.32±0.05
1
2
3
0.4
0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2110MFV, RN2111MFV
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN1110MFV to RN1111MFV
Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−100 mA
Collector power dissipation P
C
(Note 1) 150 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Land Pattern Example
JEDEC ―
JEITA ―
2-1L1A
Start of commercial production
2005-02
