NUP4201DR2

© Semiconductor Components Industries, LLC, 2008
October, 2017 Rev. 7
1 Publication Order Number:
NUP4201DR2/D
NUP4201DR2
ESD Protection Diode
Low Capacitance Surface Mount ESD
Protection for HighSpeed Data
Interfaces
The NUP4201DR2 surge protection is designed to protect
equipment attached to high speed communication lines from ESD,
EFT, and lightning.
Features
SO8 Package
Peak Power 500 Watts 8 x 20 mS
ESD Rating:
IEC 6100042 (ESD) 15 kV (air) 8 kV (contact)
IEC 6100044 (EFT) 40 A (5/50 ns)
IEC 6100045 (lightning) 25 A (8/20 ms)
UL Flammability Rating of 94 V0
PbFree Package is Available
Typical Applications
High Speed Communication Line Protection
USB Power and Data Line Protection
Video Line Protection
Base Stations
HDSL, IDSL Secondary IC Side Protection
Microcontroller Input Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation
8 x 20 mS @ T
A
= 25°C (Note 1)
P
pk
500 W
Junction and Storage Temperature Range T
J
, T
stg
55 to +150 °C
Lead Solder Temperature
Maximum 10 Seconds Duration
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse 8 x 20 mS exponential decay waveform
SO8 LOW CAPACITANCE
VOLTAGE SUPPRESSOR
500 WATTS PEAK POWER
6 VOLTS
PIN CONFIGURATION
AND SCHEMATIC
www.onsemi.com
I/O 1 1
REF 1 2
REF 1 3
I/O 2 4
8 REF 2
7 I/O 4
6 I/O 3
5 REF 2
MARKING DIAGRAM
SOIC8
CASE 751
PLASTIC
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
P4201
AYWWG
G
1
8
P4201 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
Device Package
ORDERING INFORMATION
Shipping
NUP4201DR2 SO8 2500/Tape & Reel
NUP4201DR2G SO8
(PbFree)
2500/Tape & Reel
NUP4201DR2
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage @ I
t
= 1.0 mA V
BR
6.0 V
Reverse Leakage Current @ V
RWM
= 5.0 Volts I
R
N/A 10
mA
Maximum Clamping Voltage @ I
PP
= 1.0 A, 8 x 20 mS
V
C
N/A 9.8 V
Maximum Clamping Voltage @ I
PP
= 10 A, 8 x 20 mS
V
C
N/A 12 V
Maximum Clamping Voltage @ I
PP
= 25 A, 8 x 20 mS
V
C
N/A 25 V
Between I/O Pins and Ground @ DC Bias = 0 V, 1.0 MHz Capacitance 5.0 10 pF
Between I/O Pins and I/O @ DC Bias = 0 V, 1.0 MHz Capacitance 2.5 5.0 pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
UniDirectional
NUP4201DR2
www.onsemi.com
3
TYPICAL CHARACTERISTICS
100 0
9
Figure 1. Reverse Breakdown versus
Temperature
50
T, TEMPERATURE (°C)
100 200
4
1
0
Figure 2. Reverse Leakage versus
Temperature
V
Z
, REVERSE BREAKDOWN (V)
8
7
6
5
4
3
2
1
0
100 50 50 100
T, TEMPERATURE (°C)
200
50 150
2
3
8
5
6
7
0 150
I
R
, REVERSE LEAKAGE (mA)
Figure 3. 8 x 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0204060
t, TIME (ms)
% OF PEAK PULSE CURRENT
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
80
Figure 4. Clamping Voltage versus Peak Pulse
Current
35
30
25
20
15
10
5
0
0204060
I
PP
, PEAK PULSE CURRENT (A)
80
V
C
, CLAMPING VOLTAGE (V)
10 30 50 70 90

NUP4201DR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes Low Cap. TVS Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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