SQD35N05-26L-GE3 Datasheet SQD35N05-26L-GE3 | P1-P3

SQD35N05-26L

www.vishay.com

Vishay Siliconix

S11-2046-Rev. D, 24-Oct-11

1

Document Number: 68839

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 55 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET

®

Power MOSFET

•100 % R

g

and UIS Tested

• AEC-Q101 Qualified

d

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V) 55

R

DS(on)

() at V

GS

= 10 V 0.020

R

DS(on)

() at V

GS

= 4.5 V 0.026

I

D

(A) 30

Configuration Single

D

G

S

N-Channel MOSFET

TO-252

SGD

Top View

Drain Connected to Tab

ORDERING INFORMATION

Package TO-252

Lead (Pb)-free and Halogen-free SQD35N05-26L-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

55

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

30

A

T

C

= 125 °C 19

Continuous Source Current (Diode Conduction)

a

I

S

30

Pulsed Drain Current

b

I

DM

120

Single Pulse Avalanche Energy

L = 0.1 mH

I

AS

20

Single Pulse Avalanche Current E

AS

20 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

50

W

T

C

= 125 °C 16

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

60

°C/W

Junction-to-Case (Drain) R

thJC

3

SQD35N05-26L

www.vishay.com

Vishay Siliconix

S11-2046-Rev. D, 24-Oct-11

2

Document Number: 68839

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 μA

55 - -

V

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA

1.5 2 2.5

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

- - ± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

GS

= 0 V V

DS

= 55 V

--1

μA

V

GS

= 0 V V

DS

= 55 V, T

J

= 125 °C

--50

V

GS

= 0 V V

DS

= 55 V, T

J

= 175 °C

- - 250

On-State Drain Current

a

I

D(on)

V

GS

= 5 V V

DS

5 V

30 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 20 A

- 0.016 0.020



V

GS

= 10 V I

D

= 20 A, T

J

= 125 °C

- - 0.035

V

GS

= 10 V I

D

= 20 A, T

J

= 175 °C

- - 0.043

V

GS

= 4.5 V I

D

= 15 A

- 0.021 0.026

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 20 A

-34-S

Dynamic

b

Input Capacitance

C

iss

V

GS

= 0 V V

DS

= 25 V, f = 1 MHz

- 938 1175

pF Output Capacitance

C

oss

- 203 255

Reverse Transfer Capacitance

C

rss

- 86 110

Total Gate Charge

c

Q

g

V

GS

= 5 V V

DS

= 25 V, I

D

= 35 A

-1218

nC

Gate-Source Charge

c

Q

gs

-4.1-

Gate-Drain Charge

c

Q

gd

-4.8-

Gate Resistance R

g

f = 1 MHz 1.3 2.6 4 

Turn-On Delay Time

c

t

d(on)

V

DD

= 25 V, R

L

= 0.71 

I

D

 35 A, V

GEN

= 10 V, R

g

= 1 

-711

ns

Rise Time

c

t

r

-1015

Turn-Off Delay Time

c

t

d(off)

-1827

Fall Time

c

t

f

-58

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

- - 120 A

Forward Voltage

V

SD

I

F

= 80 A, V

GS

= 0 V

-1.21.5V

SQD35N05-26L

www.vishay.com

Vishay Siliconix

S11-2046-Rev. D, 24-Oct-11

3

Document Number: 68839

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

On-Resistance vs. Junction Temperature

Transfer Characteristics

On-Resistance vs. Drain Current

Source Drain Diode Forward Voltage

0

8

16

24

32

40

0246810

V

GS

=10V thru 4 V

V

GS

=3V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0

10

20

30

40

50

0 5 10 15 20 25

T

C

= 125 °C

T

C

= - 55 °C

T

C

=25 °C

I

D

- Drain Current (A)

- Transconductance (S)

g

fs

0.5

0.9

1.3

1.7

2.1

2.5

- 50 - 25 0 25 50 75 100 125 150 175

I

D

=20A

V

GS

=10V

T

J

- Junction Temperature (°C)

(Normalized)

- On-ResistanceR

DS(on)

0

8

16

24

32

40

012345

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0.00

0.02

0.04

0.06

0.08

0.10

0 8 16 24 32 40

R

DS(on)

-On-Resistance (Ω)

I

D

-Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1

0.01

0.001

0.1

10

100

T

J

= 25 °C

T

J

= 150 °C

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

SQD35N05-26L-GE3

SQD35N05-26L-GE3

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