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DMN6070SFCL-7

P1-P3P4-P5
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
1 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMN6070SFCL
ADVANCE INFORMATION
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
60V
85 m @ V
GS
= 10V
3.0A
120 m @ V
GS
= 4V
2.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Power Management Functions
• Analog Switch
Features and Benefits
• Typical off board profile of 0.5mm - ideally suited for thin
applications
• Low R
DS(ON)
– minimizes conduction
losses
• PCB footprint of 2.56mm
2
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: X1-DFN1616-6 Type E
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Lead Free Plating (NiPdAu Finish over Copper leadframe)
• Terminals: Solderable per MIL-STD-202, Method 208
• Weight: 0.04 grams (approximate)
Ordering Information (Note 4)
Product Reel size (inches) Tape Width (mm) Quantity per Reel
DMN6070SFCL-7 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
X1-DFN1616-6
Type E
Device Symbol
Bottom View
Top View
Top View
Pin-Out
Pin 1
N60 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
D
S
G
e4
N60
YM
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMN6070SFCL
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.0
2.5
A
Pulsed Drain Current (10s pulse, Duty cycle = 1%)
I
DM
10 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.6 W
(Note 6) 1.8 W
Thermal Resistance, Junction to Ambient
(Note 5)
R
JA
200
°C/W
(Note 6) 67
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 — 3 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
67
85
m
V
GS
= 10V, I
D
= 1.5A
74 120
V
GS
= 4V, I
D
= 0.5A
Forward Transfer Admittance
|Y
fs
|
— 2.6 — S
V
DS
= 5V, I
D
= 1.5A
Diode Forward Voltage
V
SD
—
0.7 1.2 V
V
GS
= 0V, I
S
= 3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
606
—
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 32.6 — pF
Reverse Transfer Capacitance
C
rss
—
24.6
—
pF
Gate Resistance
R
g
—
1.5
—
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
=10V) Q
g
— 12.3 — nC
V
DS
= 30V, I
D
= 3A
Total Gate Charge (V
GS
=4.5V) Q
g
—
5.6
—
nC
Gate-Source Charge
Q
gs
—
1.7
—
nC
Gate-Drain Charge
Q
gd
— 1.9 — nC
Turn-On Delay Time
t
D(on)
—
3.5
—
ns
V
GS
= 10V, V
DS
= 30V,
R
G
= 20, R
L
= 50
Turn-On Rise Time
t
r
—
4.1
—
ns
Turn-Off Delay Time
t
D(off)
— 35 — ns
Turn-Off Fall Time
t
f
—
11
—
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
3 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMN6070SFCL
ADVANCE INFORMATION
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0.0
3.0
6.0
9.0
12.0
15.0
012345
V= 2.5V
GS
V= 3.0V
GS
V= 3.5V
GS
V= 5V
GS
V = 10V
GS
V= 4V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
3
6
9
12
15
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V= 5V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.03
0.06
0.09
0.12
0.15
0 3 6 9 12 15
V= 4V
GS
V = 10V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
0 3 6 9 12 15
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V= 4V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
R
,
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.4
0.8
1.2
1.6
2.0
2.4
V=4V
I= 3A
GS
D
V=V
I= 3A
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
V=4V
I= 1A
GS
D
V=V
I= 3A
GS
D
10
P1-P3P4-P5

DMN6070SFCL-7

Mfr. #:
Buy DMN6070SFCL-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF
Lifecycle:
New from this manufacturer.
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