CREAT BY ART
- Glass passivated chip junction
- Excellent high temperature switching
- Ultrafast recovery time for high efficiency
- Soft recovery characteristics
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
SYMBOL UF1A UF1B UF1D UF1G UF1J UF1K UF1M UNIT
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
Trr ns
Cj pF
T
J
O
C
T
STG
O
C
Document Number: DS_D1405072 Version: F14
UF1A thru UF1M
Taiwan Semiconductor
Glass Passivated Hi
h Efficient Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
30
Maximum repetitive peak reverse voltage
PARAMETER
Case: DO-204AL (DO-41)
DO-204AL (DO-41)
Weight: 0.33g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
1.0 V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃
I
R
5
μA
150
Maximum reverse recovery time (Note 2)
Storage temperature range - 55 to +150
Typical junction capacitance (Note 3)
Typical thermal resistance
R
θJL
R
θJA
15
60
- 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- ldally suited for use in very high frequency
switching power supplies, inverters and as free
wheeling diodes
1.7
50 75
17
O
C/W
Operating junction temperature range
