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VS-2EFU06-M3/I

P1-P3P4-P6
VS-2EFU06-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Apr-15
1
Document Number: 95866
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 2 A FRED Pt
®
FEATURES
• Ultrafast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• For PCF CRM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop, ultrafast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in PFC, boost, lighting,
in the AC/DC section of SMPS, freewheeling and clamp
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
PRODUCT SUMMARY
Package DO-219AB (SMF)
I
F(AV)
2 A
V
R
600 V
V
F
at I
F
0.95 V
t
rr
55 ns
T
J
max. 175 °C
Diode variation Single die
Cathode Anode
DO-219AB (SMF)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 135 °C
(1)
2
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C, 6 ms square pulse 30
Operating junction and storage temperature range T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
, V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 2 A - 1.10 1.35
I
F
= 2 A, T
J
= 150 °C - 0.95 1.15
Reverse leakage current I
R
V
R
= V
R
rated - - 3
μA
T
J
= 150 °C, V
R
= V
R
rated - 20 100
Junction capacitance C
T
V
R
= 600 V - 5 - pF
VS-2EFU06-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Apr-15
2
Document Number: 95866
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 42 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A - - 55
T
J
= 25 °C
I
F
= 2 A
dI
F
/dt = 500 A/μs
V
R
= 400 V
-40-
T
J
= 125 °C - 63 -
Peak recovery current I
RRM
T
J
= 25 °C - 7.0 -
A
T
J
= 125 °C - 8.1 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 140 -
nC
T
J
= 125 °C - 255 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 - +175 °C
Thermal resistance, junction to case R
thJC
Device mounted on PCB with 8 mm x 16 mm
soldering lands
--15°C/W
Thermal resistance, junction to ambient R
thJA
Device mounted on PCB with 2 mm x 3.5 mm
soldering lands
- - 130 °C/W
Approximate weight
0.015 g
0.0005 oz.
Marking device Case style DO-219AB (SMF) MPU
0.1
1
10
100
0.2 0.7 1.2 1.7 2.2 2.7 3.2
I
F
- Instantaneous Forward Current (A)
V
F
-Forward Voltage Drop (V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 150 °C
0.001
0.01
0.1
1
10
100
100 200 300 400 500 600
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
25 °C
125 °C
150 °C
175 °C
VS-2EFU06-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Apr-15
3
Document Number: 95866
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
1
10
100
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
120
130
140
150
160
170
180
00.40.81.21.622.4
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80 % rated V
R
applied
See note
(1)
DC
0
0.5
1
1.5
2
2.5
3
3.5
0 0.5 1 1.5 2 2.5 3
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
0
20
40
60
80
100
120
140
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 °C
100
120
140
160
180
200
220
240
260
280
300
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
25 °C
P1-P3P4-P6

VS-2EFU06-M3/I

Mfr. #:
Buy VS-2EFU06-M3/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers If(AV) 2A Vr 600V Fred Pt
Lifecycle:
New from this manufacturer.
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