M27W102
4/15
DEVICE OPERATION
The operating modes of the M27W102 are listed in
the Operating Modes table. A single power supply
is required in the read mode. All inputs are TTL
levels except for V
PP
and 12V on A9 for Electronic
Signature.
Read Mode
The M27W102 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. Chip Enable (E
) is the power
control and should be used for device selection.
Output Enable (G
) is the output control and should
be used to gate data to the output pins, indepen-
dent of device selection. Assuming that the ad-
dresses are stable, the address access time
(t
AVQV
) is equal to the delay from E to output
(t
ELQV
). Data is available at the output after a delay
of t
OE
from the falling edge of G, assuming that E
has been low and the addresses have been stable
for at least t
AVQV
-t
GLQV
.
Standby Mode
The M27W102 has a standby mode which reduc-
es the supply current from 15mA to 15µA with low
voltage operation V
CC
3.6V, see Read Mode DC
Characteristics table for details. The M27W102 is
placed in the standby mode by applying a CMOS
high signal to the E
input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G
input.
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times 10ns 20ns
Input Pulse Voltages 0 to 3V 0.4V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
AI01822
3V
High Speed
0V
1.5V
2.4V
Standard
0.4V
2.0V
0.8V
Figure 4. AC Testing Load Circuit
AI01823B
1.3V
OUT
C
L
C
L
= 30pF for High Speed
C
L
= 100pF for Standard
C
L
includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Table 6. Capacitance
(1)
(T
A
= 25 °C, f = 1 MHz)
Note: Sampled only, not 100% tested.
Symbol Parameter Test Condition Min Max Unit
C
IN
Input Capacitance
V
IN
= 0V
6pF
C
OUT
Output Capacitance
V
OUT
= 0V
12 pF
5/15
M27W102
Table 7. Read Mode DC Characteristics
(1)
(T
A
= –40 to 85°C; V
CC
= 2.7V to 3.6V; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Symbol Parameter Test Condition Min Max Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±10 µA
I
LO
Output Leakage Current
0V V
OUT
V
CC
±10 µA
I
CC
Supply Current
E
= V
IL
, G = V
IL
,
I
OUT
= 0mA, f = 5MHz,
V
CC
3.6V
15 mA
I
CC1
Supply Current (Standby) TTL
E
= V
IH
1mA
I
CC2
Supply Current (Standby) CMOS
E
> V
CC
– 0.2V,
V
CC
3.6V
15 µA
I
PP
Program Current
V
PP
= V
CC
10 µA
V
IL
Input Low Voltage –0.6
0.2 V
CC
V
V
IH
(2)
Input High Voltage
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4 V
V
OH
Output High Voltage TTL
I
OH
= –400µA
2.4 V
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E
should be decoded and used as the prima-
ry device selecting function, while G
should be
made a common connection to all devices in the
array and connected to the READ
line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
devices. The supply current, I
CC
, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E
. The magnitude of
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device at the
output. The associated transient voltage peaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1µF ceram-
ic capacitor be used on every device between V
CC
and V
SS
. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7µF bulk electrolytic capacitor should be
used between V
CC
and V
SS
for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purpose of the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
M27W102
6/15
Figure 5. Read Mode AC Waveforms
AI00705B
tAXQX
tEHQZ
A0-A15
E
G
Q0-Q15
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Table 8. Read Mode AC Characteristics
(1)
(T
A
= –40 to 85°C; V
CC
= 2.7V to 3.6V; V
PP
= V
CC
)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Symbol Alt Parameter
Test
Condition
M27W102
Unit
-80
(3)
-100
(-120/-150/-200)
V
CC
= 3.0V to 3.6V V
CC
= 2.7V to 3.6V V
CC
= 2.7V to 3.6V
Min Max Min Max Min Max
t
AVQV
t
ACC
Address Valid to
Output Valid
E
= V
IL
,
G
= V
IL
70 80 100 ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G
= V
IL
70 80 100 ns
t
GLQV
t
OE
Output Enable Low
to Output Valid
E
= V
IL
40 50 60 ns
t
EHQZ
(2)
t
DF
Chip Enable High
to Output Hi-Z
G
= V
IL
040050060ns
t
GHQZ
(2)
t
DF
Output Enable High
to Output Hi-Z
E
= V
IL
040050060ns
t
AXQX
t
OH
Address Transition
to Output Transition
E
= V
IL
,
G
= V
IL
000ns

M27W102-80K6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IC EPROM 1M PARALLEL 44PLCC
Lifecycle:
New from this manufacturer.
Delivery:
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