NST3946DXV6T1 Datasheet NST3946DXV6T5, NST3946DXV6T1 | P1-P3

 Semiconductor Components Industries, LLC, 2003

March, 2003 - Rev. 0

1 Publication Order Number:

NST3946DXV6T1/D

NST3946DXV6T1,

NST3946DXV6T5

Dual General Purpose

Transistor

The NST3946DXV6T1 device is a spin-off of our popular

SOT-23/SOT-323 three-leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT- 563

six-leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low-power surface mount

applications where board space is at a premium.

• h

FE

, 100-300

• Low V

CE(sat)

, ≤ 0.4 V

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Lead-Free Solder Plating

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector- Emitter Voltage

(NPN)

(PNP)

V

CEO

40

-40

Vdc

Collector- Base Voltage

(NPN)

(PNP)

V

CBO

60

-40

Vdc

Emitter- Base Voltage

(NPN)

(PNP)

V

EBO

6.0

-5.0

Vdc

Collector Current - Continuous

(NPN)

(PNP)

I

C

200

-200

mAdc

Electrostatic Discharge ESD HBM>16000,

MM>2000

V

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol Max Unit

Total Device Dissipation T

A

= 25°C

Derate above 25°C

P

D

357

(Note 1)

2.9

(Note 1)

mW

mW/°C

Thermal Resistance

Junction-to-Ambient

R



JA

350

(Note 1)

°C/W

Characteristic

(Both Junctions Heated)

Symbol Max Unit

Total Device Dissipation T

A

= 25°C

Derate above 25°C

P

D

500

(Note 1)

4.0

(Note 1)

mW

mW/°C

1. FR-4 @ Minimum Pad

SOT-563

CASE 463A

PLASTIC

1

2

3

6

5

4

Q

1

(1)(2)

(3)

(4) (5) (6)

Q

2

NST3946DXV6T1*

ORDERING INFORMATION

*Q1 PNP

Q2 NPN

http://onsemi.com

46 = Specific Device Code

D = Date Code

MARKING DIAGRAM

46 D

Device Package Shipping

NST3946DXV6T1 SOT-563 4 mm pitch

4000/Tape & Reel

NST3946DXV6T5 SOT-563 2 mm pitch

8000/Tape & Reel

NST3946DXV6T1, NST3946DXV6T5

http://onsemi.com

2

Characteristic

(Both Junctions Heated)

Symbol Max Unit

Thermal Resistance Junction-to-Ambient R



JA

250

(Note 1)

°C/W

Junction and Storage Temperature Range T

J

, T

stg

- 55 to

+150

°C

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector- Emitter Breakdown Voltage (Note 2)

(I

C

= 1.0 mAdc, I

B

= 0) (NPN)

(I

C

= -1.0 mAdc, I

B

= 0) (PNP)

V

(BR)CEO

40

-40

-

Vdc

Collector- Base Breakdown Voltage

(I

C

= 10 Adc, I

E

= 0) (NPN)

(I

C

= -10 Adc, I

E

= 0) (PNP)

V

(BR)CBO

60

-40

-

Vdc

Emitter- Base Breakdown Voltage

(I

E

= 10 Adc, I

C

= 0) (NPN)

(I

E

= -10 Adc, I

C

= 0) (PNP)

V

(BR)EBO

6.0

-5.0

-

Vdc

Base Cutoff Current

(V

CE

= 30 Vdc, V

EB

= 3.0 Vdc) (NPN)

(V

CE

= -30 Vdc, V

EB

= -3.0 Vdc) (PNP)

I

BL

-

50

-50

nAdc

Collector Cutoff Current

(V

CE

= 30 Vdc, V

EB

= 3.0 Vdc) (NPN)

(V

CE

= -30 Vdc, V

EB

= -3.0 Vdc) (PNP)

I

CEX

-

50

-50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(I

C

= 0.1 mAdc, V

CE

= 1.0 Vdc) (NPN)

(I

C

= 1.0 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 10 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 50 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc)

(I

C

= -0.1 mAdc, V

CE

= -1.0 Vdc) (PNP)

(I

C

= -1.0 mAdc, V

CE

= -1.0 Vdc)

(I

C

= -10 mAdc, V

CE

= -1.0 Vdc)

(I

C

= -50 mAdc, V

CE

= -1.0 Vdc)

(I

C

= -100 mAdc, V

CE

= -1.0 Vdc)

h

FE

40

70

100

60

30

60

80

100

60

30

-

300

-

300

-

Collector- Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc) (NPN)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

(I

C

= -10 mAdc, I

B

= -1.0 mAdc) (PNP)

(I

C

= -50 mAdc, I

B

= -5.0 mAdc)

V

CE(sat)

-

0.2

0.3

-0.25

-0.4

Vdc

Base- Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc) (NPN)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

(I

C

= -10 mAdc, I

B

= -1.0 mAdc) (PNP)

(I

C

= -50 mAdc, I

B

= -5.0 mAdc)

V

BE(sat)

0.65

-

-0.65

-

0.85

0.95

-0.85

-0.95

Vdc

2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%.

NST3946DXV6T1, NST3946DXV6T5

http://onsemi.com

3

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

SMALL- SIGNAL CHARACTERISTICS

Current- Gain - Bandwidth Product

(I

C

= 10 mAdc, V

CE

= 20 Vdc, f = 100 MHz) (NPN)

(I

C

= -10 mAdc, V

CE

= -20 Vdc, f = 100 MHz) (PNP)

f

T

300

250

-

MHz

Output Capacitance

(V

CB

= 5.0 Vdc, I

E

= 0, f = 1.0 MHz) (NPN)

(V

CB

= -5.0 Vdc, I

E

= 0, f = 1.0 MHz) (PNP)

C

obo

-

4.0

4.5

pF

Input Capacitance

(V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz) (NPN)

(V

EB

= -0.5 Vdc, I

C

= 0, f = 1.0 MHz) (PNP)

C

ibo

-

8.0

10.0

pF

Input Impedance

(V

CE

= 10 Vdc, I

C

= 1.0 mAdc, f = 1.0 kHz) (NPN)

(V

CE

= -10 Vdc, I

C

= -1.0 mAdc, f = 1.0 kHz) (PNP)

h

ie

1.0

2.0

10

12

k Ω

Voltage Feedback Ratio

(V

CE

= 10 Vdc, I

C

= 1.0 mAdc, f = 1.0 kHz) (NPN)

(V

CE

= -10 Vdc, I

C

= -1.0 mAdc, f = 1.0 kHz) (PNP)

h

re

0.5

0.1

8.0

10

X 10

-4

Small- Signal Current Gain

(V

CE

= 10 Vdc, I

C

= 1.0 mAdc, f = 1.0 kHz) (NPN)

(V

CE

= -10 Vdc, I

C

= -1.0 mAdc, f = 1.0 kHz) (PNP)

h

fe

100

400

-

Output Admittance

(V

CE

= 10 Vdc, I

C

= 1.0 mAdc, f = 1.0 kHz) (NPN)

(V

CE

= -10 Vdc, I

C

= -1.0 mAdc, f = 1.0 kHz) (PNP)

h

oe

1.0

3.0

40

60

mhos

Noise Figure

(V

CE

= 5.0 Vdc, I

C

= 100 Adc, R

S

= 1.0 k Ω, f = 1.0 kHz) (NPN)

(V

CE

= -5.0 Vdc, I

C

= -100 Adc, R

S

= 1.0 k Ω, f = 1.0 kHz) (PNP)

NF

-

5.0

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time (V

CC

= 3.0 Vdc, V

BE

= -0.5 Vdc) (NPN)

(V

CC

= -3.0 Vdc, V

BE

= 0.5 Vdc) (PNP)

t

d

-

35

ns

Rise Time (I

C

= 10 mAdc, I

B1

= 1.0 mAdc) (NPN)

(I

C

= -10 mAdc, I

B1

= -1.0 mAdc) (PNP)

t

r

-

35

ns

Storage Time (V

CC

= 3.0 Vdc, I

C

= 10 mAdc) (NPN)

(V

CC

= -3.0 Vdc, I

C

= -10 mAdc) (PNP)

t

s

-

200

225

ns

Fall Time (I

B1

= I

B2

= 1.0 mAdc) (NPN)

(I

B1

= I

B2

= -1.0 mAdc) (PNP)

t

f

-

50

75

ns

NST3946DXV6T1

NST3946DXV6T1

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