NXP Semiconductors
BYV34-400
Dual ultrafast power diode
BYV34-400 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 June 2014 3 / 10
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 400 V
V
RWM
crest working reverse voltage - 400 V
V
R
reverse voltage T
mb
≤ 138 °C; DC - 400 V
I
O(AV)
average output current SQW; δ = 0.5; T
mb
≤ 115 °C; both
diodes conducting; Fig. 1; Fig. 2
- 20 A
I
FRM
repetitive peak forward current δ = 0.5; t
p
= 25 µs; T
mb
≤ 115 °C; per
diode
- 20 A
SIN; t
p
= 10 ms; T
j(init)
= 25 °C; per
diode
- 120 AI
FSM
non-repetitive peak forward
current
SIN; t
p
= 8.3 ms; T
j(init)
= 25 °C; per
diode
- 132 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
I
F(AV)
(A)
0 16124 8
003aaj488
8
12
4
16
20
P
tot
(W)
0
δ = 1
0.5
0.2
0.1
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.94 V; R
s
= 0.01 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; per
diode; maximum values
I
F(AV)
(A)
0 1084 62
003aaj489
P
tot
(W)
12
8
4
0
a = 1.57
1.9
2.2
2.8
4.0
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.94 V; R
s
= 0.01 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
per diode; maximum values
