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RN2116,LF(CT

P1-P3P4-P6P7-P8
RN2114 RN2118
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2114, RN2115, RN2116, RN2117, RN2118
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1107 to RN1109
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta
=
25 C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage
RN2114 to 2118
V
CEO
50 V
RN2114 5
RN2115 6
RN2116 7
RN2117 15
Emitter-base voltage
RN2118
V
EBO
25
V
Collector current I
C
100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
150 C
Storage temperature range
RN2114 to 2118
T
stg
55 to 150 C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA 2 2H1A
Weight: 2.4mg (typ.)
Unit: mm
Type No. R1 (k ) R2 (k )
RN2114 1 10
RN2115 2.2 10
RN2116 4.7 10
RN2117 10 4.7
RN2118 47 10
Start of commercial production
1994-08
RN2114 RN2118
2014-03-01
2
Electrical Characteristics
(Ta
=
25 C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
RN2114 to 2118 I
CBO
V
CB
= 50 V, I
E
= 0 100 nA
Collector cut-off
current
RN2114 to 2118 I
CEO
V
CE
= 50 V, I
B
= 0 500 nA
RN2114 V
EB
= 5 V, I
C
= 0 0.35 0.65
RN2115 V
EB
= 6 V, I
C
= 0 0.37 0.71
RN2116 V
EB
= 7 V, I
C
= 0 0.36 0.68
RN2117 V
EB
= 15 V, I
C
= 0 0.78 1.46
Emitter cut-off current
RN2118
I
EBO
V
EB
= 25 V, I
C
= 0 0.33 0.63
mA
RN2114 to 2116
RN2118
50
DC current gain
RN2117
h
FE
V
CE
= 5 V, I
C
= 10 mA
30
Collector-emitter
saturation voltage
RN2114 to 2118 V
CE (sat)
I
C
= 5 mA,
I
B
= 0.25 mA
0.1 0.3
V
RN2114
0.5 2.0
RN2115
0.6 2.5
RN2116
0.7 2.5
RN2117
1.5 3.5
Input voltage (ON)
RN2118
V
I (ON)
V
CE
= 0.2 V, I
C
= 5 mA
2.5 10.0
V
RN2114
0.3 0.9
RN2115
0.3 1.0
RN2116
0.3 1.1
RN2117
0.3 3.0
Input voltage (OFF)
RN2118
V
I (OFF)
V
CE
= 5 V, I
C
= 0.1 mA
0.5 5.7
V
Transition frequency RN2114 to 2118 f
T
V
CE
= 10 V, I
C
= 5 mA 200
MHz
Collector Output
capacitance
RN2114 to 2118 C
ob
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
3.0 6.0
pF
RN2114
0.7 1.0 1.3
RN2115
1.54 2.2 2.86
RN2116
3.29 4.7 6.11
RN2117
7.0 10.0 13.0
Input resistor
RN2118
R1
32.9 47.0 61.1
k
RN2114
0.1
RN2115
0.22
RN2116
0.47
RN2117
2.13
Resistor ratio
RN2118
R1/R2
4.7
RN2114 RN2118
2014-03-01
3
IC - VI (ON)
-0.1
-1
-10
-100
-0.1 -1 -10
INPUT VOLTAGE VI (ON) (V)
COMMON EMITTER
VCE = -0.2 V
25
-25
RN2114
IC - VI (ON)
-0.1
-1
-10
-100
-0.1 -1 -10
INPUT VOLTAGE VI (ON) (V)
COMMON EMITTER
VCE = -0.2 V
25
-25
RN2115
Ta = 100°C
Ta = 100°C
IC - VI (ON)
-0.1
-1
-10
-100
-0.1 -1 -10
INPUT VOLTAGE VI (ON) (V)
COMMON EMITTER
VCE = -0.2 V
25
-25
RN2116
IC - VI (ON)
-0.1
-1
-10
-100
-0.1 -1 -10 -100
INPUT VOLTAGE VI (ON) (V)
COMMON EMITTER
VCE = -0.2 V
25
-25
RN2117
Ta = 100°C
Ta = 100°C
IC - VI(ON)
-0.1
-1
-10
-100
-0.1 -1 -10 -100
INPUT VOLTAGE VI (ON) (V)
COMMON EMITTER
VCE = -0.2 V
25
-25
RN2118
Ta = 100°C
P1-P3P4-P6P7-P8

RN2116,LF(CT

Mfr. #:
Buy RN2116,LF(CT
Manufacturer:
Toshiba
Description:
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Lifecycle:
New from this manufacturer.
Delivery:
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