REV. A
AD8225
–3–
Parameter Conditions Min Typ Max Unit
GAIN
Gain 5V/V
Gain Error 0.1 +0.05 +0.1 %
Nonlinearity 2 10 ±ppm
vs. Temperature 1 5 ±ppm/°C
VOLTAGE OFFSET (RTI)
Offset Voltage 125 325 ±µV
vs. Temperature 2 ±µV/°C
vs. Supply 90 100 dB
INPUT
Input Operating Impedance
Differential 10
2G
pF
Common-Mode 10
2G
pF
Input Operating Voltage Range V
S
+ 1.6 +V
S
1.0 V
vs. Temperature V
S
+ 2.1 +V
S
1.5 V
Input Bias Current 0.5 1.2 nA
vs. Temperature 3 pA/°C
Input Offset Current 0.15 0.5 nA
vs. Temperature 1.5 pA/°C
Common-Mode Rejection Ratio 86 94 dB
T
A
= T
MIN
to T
MAX
83 dB
f = 10 kHz* 80 dB
OUTPUT
Operating Voltage Range R
L
= 2 k V
S
+ 0.9 +V
S
1.0 V
vs. Temperature V
S
+ 1.0 +V
S
1.2 V
Operating Voltage Range R
L
= 10 k V
S
+ 0.8 +V
S
1.0 V
vs. Temperature V
S
+ 0.9 +V
S
1.0 V
Short Circuit Current 18 mA
DYNAMIC RESPONSE
Small Signal 3 dB Bandwidth 900 kHz
Full Power Bandwidth V
OUT
= 7.8 V p-p 170 kHz
Settling Time (0.01%) 7 V Step 3 µs
Settling Time (0.001%) 7 V Step 4.3 µs
Slew Rate 5 V/µs
NOISE (RTI)
Voltage 0.1 Hz to 10 Hz 1.5 µV p-p
Spectral Density, 1 kHz 45 nV/Hz
Current 0.1 Hz to 10 Hz 4 pA p-p
Spectral Density, 1 kHz 50 fA/Hz
REFERENCE INPUT
R
IN
18 k
I
IN
V
INT
, V
REF
= 0 60 µA
Voltage Range V
S
+ 0.9 +V
S
1.0 V
Gain to Output 0.999 1 1.001
POWER SUPPLY
Operating Range 1.7 18 ±V
Quiescent Current 1.05 1.2 mA
TEMPERATURE RANGE
For Specified Performance 40 +85 °C
*Pin 1 connected to Pin 4. See Applications section.
Specifications subject to change without notice.
SPECIFICATIONS
(T
A
= 25C, V
S
= 5 V, R
L
= 2 k, unless otherwise noted.)
REV. A–4–
AD8225
Parameter Conditions Min Typ Max Unit
GAIN
Gain 5V/V
Gain Error 0.1 +0.05 +0.1 %
Nonlinearity 2 10 ±ppm
vs. Temperature 1 5 ±ppm/°C
OFFSET VOLTAGE (RTI)
Offset Voltage 150 375 ±µV
vs. Temperature 2 ±µV/°C
vs. Supply 90 100 dB
INPUT
Input Operating Impedance
Differential 10
2G
pF
Common Mode 10
2G
pF
Input Voltage Range 1.6 V
S
1.05 V
(Common-Mode)
vs. Temperature 1.7 V
S
1.0 V
Input Bias Current 0.5 1.2 nA
vs. Temperature 3 pA/°C
Input Offset Current 0.15 0.5 nA
vs. Temperature 1.5 pA/°C
Common-Mode Rejection Ratio 86 94 dB
T
A
= T
MIN
to T
MAX
83 dB
f = 10 kHz* 80 dB
OUTPUT
Operating Voltage Range R
L
= 2 k 0.8 V
S
1.05 V
vs. Temperature 0.9 V
S
1.2 V
Operating Voltage Range R
L
= 10 k 0.8 V
S
1.0 V
vs. Temperature 0.9 V
S
1.0 V
Short Circuit Current 18 mA
DYNAMIC RESPONSE
Small Signal 3 dB Bandwidth 900 kHz
Full Power Bandwidth V
OUT
= 3.2 V p-p 420 kHz
Settling Time (0.01%) 2 V Step 3.3 µs
Settling Time (0.001%) 2 V Step 5.1 µs
Slew Rate 5 V/µs
NOISE (RTI)
Voltage 0.1 Hz to 10 Hz 1.5 µV p-p
Spectral Density, 1 kHz 45 nV/Hz
Current 0.1 Hz to 10 Hz 4 pA p-p
Spectral Density, 1 kHz 50 fA/Hz
REFERENCE INPUT
R
IN
18 k
I
IN
60 µA
Voltage Range 0.4 V
S
0.9 V
Gain to Output 0.999 1 1.001
POWER SUPPLY
Operating Range 3.4 36 V
Quiescent Current 1.05 1.2 mA
TEMPERATURE RANGE
For Specified Performance 40 +85 °C
*Pin 1 connected to Pin 4. See Applications section.
Specifications subject to change without notice.
SPECIFICATIONS
(T
A
= 25C, V
S
= 5 V, R
L
= 2 k, unless otherwise noted.)
REV. A
AD8225
–5–
PIN FUNCTION DESCRIPTIONS
Pin Number Mnemonic Function
1NCMay be Connected to Pin 4 to
Balance C
IN
2 IN Inverting Input
3 +IN Noninverting Input
4 V
S
Negative Supply Voltage
5 REF Connect to Desired Output
CMV
6V
OUT
Output
7+V
S
Positive Supply Voltage
8NC
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . 650 mW
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 25 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Storage Temperature . . . . . . . . . . . . . . . . . . 65ºC to +125ºC
Operating Temperature Range . . . . . . . . . . . 40º C to +85ºC
Lead Temperature Range (10 sec Soldering) . . . . . . . . . 300ºC
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
AMBIENT TEMPERATURE – C
1.5
1.0
0
–50
80
–40
POWER DISSIPATION – W
–30
–20
–10 0 10 203040506070
0.5
90
T
J
= 150 C
8-LEAD SOIC PACKAGE
Figure 2. Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
Model Temperature Range Package Description Package Options
AD8225AR 40ºC to +85ºC 8-Lead SOIC RN-8
AD8225AR-REEL 40ºC to +85ºC 8-Lead SOIC 13" REEL
AD8225AR-REEL7 40ºC to +85ºC 8-Lead SOIC 7" REEL
AD8225-EVAL Evaluation Board RN-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8225 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.

AD8225ARZ-R7

Mfr. #:
Manufacturer:
Description:
Instrumentation Amplifiers Precision IC w/ fixed Gain of 5
Lifecycle:
New from this manufacturer.
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