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MRF1517NT1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
4
RF Device Data
Freescale Semiconductor
MRF1517NT1
TYPICAL CHARACTERISTICS, 480 - 520 MHz
P
in
= 27 dBm
V
DD
= 7.5 Vdc
2
P
out
, OUTPUT POWER (WATTS)
50
10
80
14
Eff, DRAIN EFFICIENCY (%)
30
60
40
35
Eff, DRAIN EFFICIENCY (%)
Figure 4. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
8
6
14
Figure 5. Drain Efficiency versus Output Power
2
GAIN (dB)
Figure 6. Output Power versus Biasing Current
12
I
DQ
, BIASING CURRENT (mA)
0
Figure 7. Drain Efficiency versus Biasing Current
80
I
DQ
, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
5
V
DD
, SUPPLY VOLTAGE (VOLTS)
0
Figure 9. Drain Efficiency versus Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
30
9
8
5
0
40
60
60
30
4000
4
12
600 1000
80
2
4
6
10
18
200
50
12
P
out
, OUTPUT POWER (WATTS)
200 1000400 600
P
out
, OUTPUT POWER (WATTS)
69107
678 10
31
2
6
Eff, DRAIN EFFICIENCY (%)
50
70
500 MHz
520 MHz
480 MHz
56479108
16
68791011
70
20
500 MHz
520 MHz
480 MHz
800
8
500 MHz
520 MHz
480 MHz
800
70
500 MHz
520 MHz
480 MHz
10
8
500 MHz
520 MHz
480 MHz
500 MHz
520 MHz
480 MHz
10
40
V
DD
= 7.5 Vdc V
DD
= 7.5 Vdc
P
in
= 27 dBm
V
DD
= 7.5 Vdc
P
in
= 27 dBm
I
DQ
= 150 mA
P
in
= 27 dBm
I
DQ
= 150 mA
MRF1517NT1
5
RF Device Data
Freescale Semiconductor
Figure 10. 400 - 440 MHz Broadband Test Circuit
V
DD
C6
R3
C7
C5
R2
RF
INPUT
RF
OUTPUT
Z2 Z3
Z5
C1
C3
C13
DUT
Z6 Z8 Z9
Z4
L1
Z7
N2
C17
B2
N1
+
C12
C4
C11
B1, B2 Short Ferrite Beads, Fair Rite Products
(2743021446)
C1, C13 300 pF, 100 mil Chip Capacitors
C2, C3, C4, C10,
C11, C12 0 to 20 pF, Trimmer Capacitors
C5, C17 130 pF, 100 mil Chip Capacitors
C6, C14 10 µF, 50 V Electrolytic Capacitors
C7, C15 0.1 µF, 100 mil Chip Capacitors
C8, C16 1,000 pF, 100 mil Chip Capacitors
C9 33 pF, 100 mil Chip Capacitor
L1 55.5 nH, 5 Turn, Coilcraft
N1, N2 Type N Flange Mounts
R1 12 Ω, 0805 Chip Resistor
R2 1.0 kΩ, 1/8 W Resistor
R3 33 kΩ, 1/2 W Resistor
Z1 0.617″ x 0.080″ Microstrip
Z2 0.723″ x 0.080″ Microstrip
Z3 0.513″ x 0.080″ Microstrip
Z4, Z5 0.260″ x 0.223″ Microstrip
Z6 0.048″ x 0.080″ Microstrip
Z7 0.577″ x 0.080″ Microstrip
Z8 1.135″ x 0.080″ Microstrip
Z9 0.076″ x 0.080″ Microstrip
Board Glass Teflon
, 31 mils, 2 oz. Copper
Z1
C2
V
GG
C14
+
C8
B1
R1
C15C16
C9
C10
TYPICAL CHARACTERISTICS, 400 - 440 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT RETURN LOSS (dB)
−5
−15
−25
−10
21
0
45
Figure 11. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
2
Figure 12. Input Return Loss versus Output Power
P
out
, OUTPUT POWER (WATTS)
0
6
0.40.1
4
440 MHz
0.3 0.50.2
0
10
400 MHz
3
9
7
689710
−20
400 MHz
420 MHz
440 MHz
1
3
5
8
420 MHz
V
DD
= 7.5 Vdc V
DD
= 7.5 Vdc
6
RF Device Data
Freescale Semiconductor
MRF1517NT1
TYPICAL CHARACTERISTICS, 400 - 440 MHz
2
P
out
, OUTPUT POWER (WATTS)
50
20
70
14
Eff, DRAIN EFFICIENCY (%)
30
60
40
35
Eff, DRAIN EFFICIENCY (%)
Figure 13. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
7
5
13
Figure 14. Drain Efficiency versus Output Power
2
GAIN (dB)
1
Figure 15. Output Power versus Biasing Current
12
I
DQ
, BIASING CURRENT (mA)
0
Figure 16. Drain Efficiency versus Biasing Current
80
I
DQ
, BIASING CURRENT (mA)
Figure 17. Output Power versus Supply Voltage
5
V
DD
, SUPPLY VOLTAGE (VOLTS)
0
Figure 18. Drain Efficiency versus Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
9
8
5
0
40
60
60
30
4000
6
12
600 1000
80
4
9
17
200
50
11
P
out
, OUTPUT POWER (WATTS)
200 1000400 600
P
out
, OUTPUT POWER (WATTS)
69107
67 8 10
35
2
4
8
Eff, DRAIN EFFICIENCY (%)
50
70
30
4679810
15
68791011
0
10
800
6
10
8
800
70
10
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
400 MHz
440 MHz
420 MHz
2
40
P
in
= 25.5 dBm
V
DD
= 7.5 Vdc
V
DD
= 7.5 Vdc
V
DD
= 7.5 Vdc
P
in
= 25.5 dBm
I
DQ
= 150 mA
P
in
= 25.5 dBm
V
DD
= 7.5 Vdc
P
in
= 25.5 dBm
I
DQ
= 150 mA
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MRF1517NT1

Mfr. #:
Buy MRF1517NT1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors RF LDMOS FET PLD1.5N
Lifecycle:
New from this manufacturer.
Delivery:
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