NTD4979N-35G

NTD4979N
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4
TYPICAL PERFORMANCE CURVES
10 V thru 4.5 V
2.6 V
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (A)
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (mW)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (mW)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (V)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
DS
= 10 V
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
I
D
= 30 A
V
GS
= 10 V
V
GS
= 4.2 V
3.0 V
3.4 V
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
3.8 V
0
10
20
30
40
50
60
70
012345
0
10
20
30
40
50
60
70
12345
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.5
50 25 0 25 50 75
1.4
1.6
1.8
100 125 175
10
100
51015202530
1000
10000
1.7
150
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
10 20 30 40 50 60 70
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.015
0.016
0.017
0.018
0.019
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
NTD4979N
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5
TYPICAL PERFORMANCE CURVES
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
015
V
DS
, DRAINTOSOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
5
T
J
= 25°C
C
oss
C
rss
C
iss
Figure 8. GatetoSource and DraintoSource
Voltage vs. Total Charge
4
0
Q
G
, TOTAL GATE CHARGE (nC)
2
8
I
D
= 30 A
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 A
Q
T
V
SD
, SOURCETODRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
20
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
= 19 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
E
AS
, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
30
V
GS
, GATETOSOURCE VOLTAGE (V)
6
Q
gs
V
GS
= 0 V
Q
gd
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
100 ms
1 ms
10 ms
dc
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
f
t
r
1
10
3
5
7
9
10 25
0
200
400
600
800
1000
1200
03146257108111391214
1
10
1 10 100
100
1000
0
10
0.4 0.7 1.0
20
30
5
15
25
0.5 0.80.6 0.9
T
J
= 125°C
1
10
1 10 100
100
1000
0.1
0.01
0.10.01
15 1716 18
100
300
500
700
900
1100
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
25 50 75 100 125 150 175
NTD4979N
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6
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
b
D
E
b3
L3
L4
b2
e
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*

NTD4979N-35G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 30V 41A 9MOHM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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