© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 0
1 Publication Order Number:
NTD4979N/D
NTD4979N
Power MOSFET
30 V, 41 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Three Package Variations for Design Flexibility
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
12.7
A
T
A
= 100°C 9.0
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.56 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
9.4
A
T
A
= 100°C 6.6
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
1.38 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
41
A
T
C
= 100°C 29
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
26.3 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
150 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
40 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+175
°C
Source Current (Body Diode) I
S
24 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 19 A
pk
, L = 0.1 mH, R
G
= 25 W)
EAS 18 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
9.0 mW @ 10 V
41 A
19 mW @ 4.5 V
G
S
N−CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
YWW
49
79NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
49
79NG
YWW
49
79NG
Y = Year
WW = Work Week
4979N = Device Code
G = Pb−Free Package
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
1
2
3
4
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
1
2
3
4
