BAV99
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 16-May-13
1
Document Number: 85718
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode, Dual in Series
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Fast switching speed
• High conductance
• Surface mount package ideally suited for
automatic insertion
• Connected in series
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAV99
BAV99-E3-08 or BAV99-E3-18
Dual diodes serial JE Tape and reel
BAV99-HE3-08 or BAV99-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Non repetitive peak reverse voltage V
RM
100
V
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
V
RRM
= V
RWM
= V
R
70
Peak forward surge current
t
p
= 1 s
I
FSM
1
A
t
p
= 1 μs 4.5
Average forward current
Half wave rectification with resistive load
and f 50 MHz, on ceramic substrate
10 mm x 8 mm x 0.7 mm
I
F(AV)
150
mA
Forward current
On ceramic substrate
10 mm x 8 mm x 0.7 mm
I
F
250
Power dissipation
On ceramic substrate
10 mm x 8 mm x 0.7 mm
P
tot
300 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
On ceramic substrate
10 mm x 8 mm x 0.7 mm
R
thJA
430 K/W
Junction and storage temperature range T
j
= T
stg
- 55 to + 150 °C
Operating temperature range T
op
- 55 to + 150 °C
