BDW84D-S Datasheet BDW84-S, BDW84D-S, BDW84A-S | P1-P3

BDW84, BDW84A, BDW84B, BDW84C, BDW84D

PNP SILICON POWER DARLINGTONS

PRODUCT INFORMATION

1

AUGUST 1978 - REVISED JUNE 2011

Specifications are subject to change without notice.

● Designed for Complementary Use with

BDW83, BDW83A, BDW83B, BDW83C and

BDW83D

● 125 W at 25°C Case Temperature

● 15 A Continuous Collector Current

● Minimum h

FE

of 750 at 3 V, 6 A

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

B

C

E

1

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= -5 mA, R

BE

= 100 Ω,

V

BE(off)

= 0, R

S

= 0.1 Ω, V

CC

= -20 V.

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

E

= 0)

BDW84

BDW84A

BDW84B

BDW84C

BDW84D

V

CBO

-45

-60

-80

-100

-120

V

Collector-emitter voltage (I

B

= 0) (see Note 1)

BDW84

BDW84A

BDW84B

BDW84C

BDW84D

V

CEO

-45

-60

-80

-100

-120

V

Emitter-base voltage V

EBO

-5 V

Continuous collector current I

C

-15 A

Continuous base current I

B

-0.5 A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P

tot

125 W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P

tot

3.5 W

Unclamped inductive load energy (see Note 4) ½LI

C

2

100 mJ

Operating junction temperature range T

j

-65 to +150 °C

Operating temperature range T

stg

-65 to +150 °C

Operating free-air temperature range T

A

-65 to +150 °C

OBSOLETE

BDW84, BDW84A, BDW84B, BDW84C, BDW84D

PNP SILICON POWER DARLINGTONS

2

PRODUCT INFORMATION

AUGUST 1978 - REVISED JUNE 2011

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)CEO

Collector-emitter

breakdown voltage

I

C

= -30 mA I

B

= 0 (see Note 5)

BDW84

BDW84A

BDW84B

BDW84C

BDW84D

-45

-60

-80

-100

-120

V

I

CEO

Collector-emitter

cut-off current

V

CE

= -30 V

V

CE

= -30 V

V

CE

= -40 V

V

CE

= -50 V

V

CE

= -60 V

I

B

=0

I

B

=0

I

B

=0

I

B

=0

I

B

=0

BDW84

BDW84A

BDW84B

BDW84C

BDW84D

-1

mA

I

CBO

Collector cut-off

current

V

CB

= -45 V

V

CB

= -60 V

V

CB

= -80 V

V

CB

= -100 V

V

CB

= -120 V

V

CB

= -45 V

V

CB

= -60 V

V

CB

= -80 V

V

CB

= -100 V

V

CB

= -120 V

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

T

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

= 150°C

BDW84

BDW84A

BDW84B

BDW84C

BDW84D

BDW84

BDW84A

BDW84B

BDW84C

BDW84D

-0.5

-5

mA

I

EBO

Emitter cut-off

current

V

EB

= -5 V I

C

=0 -2 mA

h

FE

Forward current

transfer ratio

V

CE

= -3 V

V

CE

= -3 V

I

C

= -6 A

I

C

=-15 A

(see Notes 5 and 6)

750

100

20000

V

BE(on)

Base-emitter

voltage

V

CE

= -3 V I

C

= -6 A (see Notes 5 and 6) -2.5 V

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= -12 mA

I

B

= -150 mA

I

C

= -6 A

I

C

=-15 A

(see Notes 5 and 6)

-2.5

-4

V

EC

Parallel diode

forward voltage

I

E

= -15 A I

B

= 0 -3.5 V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 1 °C/W

R

θJA

Junction to free air thermal resistance 35.7 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

on

Turn-on time I

C

= -10 A

V

BE(off)

= 4.2 V

I

B(on)

= -40 mA

R

L

= 3 Ω

I

B(off)

= 40 mA

t

p

= 20 µs, dc ≤ 2%

0.9 µs

t

off

Turn-off time 7 µs

OBSOLETE

BDW84, BDW84A, BDW84B, BDW84C, BDW84D

PNP SILICON POWER DARLINGTONS

3

PRODUCT INFORMATION

AUGUST 1978 - REVISED JUNE 2011

Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

-0·5 -20-1·0 -10

h

FE

- Typical DC Current Gain

100

1000

10000

TCS145AG

T

C

= -40°C

T

C

= 25°C

T

C

= 100°C

V

CE

= -3 V

t

p

= 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

-0·5 -20-1·0 -10

V

CE(sat)

- Collector-Emitter Saturation Voltage - V

-2·0

-1·5

-1·0

-0·5

0

TCS145AH

T

C

= -40°C

T

C

= 25°C

T

C

= 100°C

t

p

= 300 µs, duty cycle < 2%

I

B

= I

C

/ 100

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

-0·5 -20-1·0 -10

V

BE(sat)

- Base-Emitter Saturation Voltage - V

-3·0

-2·5

-2·0

-1·0

-1·5

-0·5

0

TCS145AI

T

C

= -40°C

T

C

= 25°C

T

C

= 100°C

I

B

= I

C

/ 100

t

p

= 300 µs, duty cycle < 2%

OBSOLETE

BDW84D-S

BDW84D-S

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