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VBT30L60CHM3/I

P1-P3P4-P4
VBT30L60C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Nov-17
1
Document Number: 89329
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.32 V at I
F
= 5.0 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Not recommended for PCB bottom side wave mounting
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
60 V
I
FSM
200 A
V
F
at I
F
= 15 A 0.45 V
T
J
max. 150 °C
Package TO-263AB
Diode variation Common cathode
TO-263AB
1
2
K
TMBS
®
PIN 1
PIN 2
K
HEATSINK
VBT30L60C
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT30L60C UNIT
Maximum repetitive peak reverse voltage V
RRM
60 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VBT30L60C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Nov-17
2
Document Number: 89329
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MIN. UNIT
Instantaneous forward voltage per diode
I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.43 -
V
I
F
= 7.5 A 0.46 -
I
F
= 15 A 0.51 0.60
I
F
= 5.0 A
T
A
= 125 °C
0.32 -
I
F
= 7.5 A 0.36 -
I
F
= 15 A 0.45 0.57
Reverse current per diode V
R
= 60 V
T
A
= 25 °C
I
R
(2)
-4.0
mA
T
A
= 125 °C 27 110
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT30L60C UNIT
Typical thermal resistance
per diode
R
JC
1.8
°C/W
per device 0.8
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VBT30L60C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VBT30L60C-E3/8W 1.39 8W 800/reel Tape and reel
TO-263AB VBT30L60C-M3/I 1.39 I 800/reel Tape and reel
Case Temperature (°C)
Average Forward Rectified Current (A)
35
30
25
15
5
0
0 25 50 75 125 150
10
100
20
0
1
7
8
9
10
024 8 1618
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
12
D = t
p
/T t
p
T
2
3
4
6
5
14610
VBT30L60C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Nov-17
3
Document Number: 89329
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
0 0.1 0.3 0.6 0.8
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.5 0.7
Instantaneous Forward Current (A)
0.2 0.4
20 40 60 80 100
10
0.1
0.01
0.001
1000
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
1
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Junction to Case
1
Transient Thermal Impedance (°C/W)
D
2
PAK (TO-263AB)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
P1-P3P4-P4

VBT30L60CHM3/I

Mfr. #:
Buy VBT30L60CHM3/I
Manufacturer:
Vishay
Description:
DIODE ARRAY SCHOTTKY 60V TO263AB
Lifecycle:
New from this manufacturer.
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