KSB795OSTU

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSB794/795

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics

T

C

=25°C unless otherwise noted

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed.

h

FE

Classificntion

Symbol Parameter Value Units

V

CBO

Collector-Base Volage

: KSB794

: KSB795

- 60

- 80

V

V

V

CEO

Collector-Emitter Volage

: KSB794

: KSB795

- 60

- 80

V

V

V

EBO

Emitter-Base Voltage - 8 V

I

C

Collector Current (DC) - 1.5 A

I

CP

*Collector Current (Pulse) - 3 A

I

B

Base Current (DC) - 0.15 A

P

C

Collector Dissipation (T

a

=25°C) 1 W

P

C

Collector Dissipation (T

C

=25°C) 10 W

TJ Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

I

CBO

Collector Cut-off Current V

CB

= - 60V, I

E

= 0 - 10 µA

I

CER

Collector Cut-off Current V

CE

= - 60V, R

BE

= 51Ω @ T

C

= 125°C - 1mA

I

CEX1

Collector Cut-off Current V

CE

= - 60V, V

BE

(off) = 1.5V - 10 µA

I

CEX2

Collector Cut-off Current V

CE

= - 60V, V

BE

(off) = 1.5V

@ T

C

= 125°C

-1 mA

I

EBO

Emitter Cut-off Current V

EB

= - 5V, I

C

= 0 - 1 mA

h

FE1

h

FE2

* DC Current Gain V

CE

= - 2V, I

C

= - 0.5A

V

CE

= - 2V, I

C

= - 1A

1000

2000 30000

V

CE

(sat) * Collector-Emitter Saturation Voltage I

C

= - 1A, I

B

= - 1mA -1.5 V

V

BE

(sat) * Base-Emitter Saturation Voltage I

C

= - 1A, I

B

= - 1mA - 2 V

Classification R O Y

h

FE2

2000 ~ 5000 4000 ~ 10000 8000 ~ 30000

KSB794/795

Audio Frequency Power Amplifier

• Low Speed Switching Industrial Use

R1

.

= 10 kΩ

R2

.

= 500Ω

1

TO-126

1. Emitter 2.Collector 3.Base

©2001 Fairchild Semiconductor Corporation

KSB794/795

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Safe Operating Area

Figure 5. Derating Curve of Safe Operating Area Figure 6. Power Derating

-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

-1.4

-1.6

-1.8

-2.0

I

B

=-80uA

I

B

=-100uA

I

B

=-150uA

I

B

=-200uA

I

B

=-300uA

I

B

=-500uA

I

B

=-1000uA

I

C

(A), COLLECTOR CURRENT

V

CE

(V), COLLECTOR-EMITTER VOLTAGE

-0.01 -0.1 -1 -10

100

1000

10000

100000

V

CE

=-2V

Plused

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

-0.1 -1

-0.1

-1

-10

V

CE

(SAT)

V

BE

(SAT)

I

C

=2000I

B

V

CE(SAT)

. V

BE(SAT)

[V], SATURATION VOLTAGE

I

C

[A],COLLECTOR CURRENT

110100

0.01

0.1

1

10

Dissipation Limited

S/b Limited

DC

300us

3ms

1ms

100us

PW=30us

Single pulse

I

C

(A), COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175 200

0

20

40

60

80

100

120

140

160

Dissipation Limited

S/b Limited

dT[%], I

C

DERATING

T

C

[

O

C], CASE TEMPERATURE

0 25 50 75 100 125 150 175

0

2

4

6

8

10

12

14

P

D

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

Package Demensions

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSB794/795

Dimensions in Millimeters

3.25

±0.20

8.00

±0.30

ø3.20

±0.10

0.75

±0.10

#1

0.75

±0.10

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

1.60

±0.10

11.00

±0.20

3.90

±0.10

14.20MAX

16.10

±0.20

13.06

±0.30

1.75

±0.20

(0.50)

(1.00)

0.50

+0.10

–0.05

TO-126

KSB795OSTU

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

TRANS PNP DARL 80V 1.5A TO-126

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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