DMN2104L-7 Datasheet DMN2104L-7 | P1-P3

DMN2104L

Document number: DS31560 Rev. 1 - 2

1 of 4

www.diodes.com

October 2008

DMN2104L

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• 53mΩ @V

GS

= 4.5V

• 104mΩ @V

GS

= 2.5V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.008 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Drain Current (Note 3)

I

D

4.3 A

Pulsed Drain Current (Note 4)

I

DM

15 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 3)

P

D

1.4 W

Thermal Resistance, Junction to Ambient (Note 3)

R

θ

JA

90 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

BV

DSS

20

⎯ ⎯

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

⎯ ⎯

500 nA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

⎯ ⎯

±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS

(

th

)

0.45

⎯

1.4 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

⎯

42

84

53

104

mΩ

V

GS

= 4.5V, I

D

= 4.2A

V

GS

= 2.5V, I

D

= 3.1A

Forward Transfer Admittance

|Y

fs

| ⎯

6.6

⎯

S

V

DS

=5V, I

D

= 4.2A

Diode Forward Voltage (Note 5)

V

SD

⎯

0.7 1.2 V

V

GS

= 0V, I

S

= 1.0A

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

⎯

325

⎯

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

⎯

92

⎯

pF

Reverse Transfer Capacitance

C

rss

⎯

70

⎯

pF

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R

θJA

= 90°C/W.

4. Repetitive rating, pulse width limited by junction temperature.

5. Short duration pulse test used to minimize self-heating effect.

SOT-23

TOP VIEW

E

q

uivalent Circuit

TOP VIEW

D

G

S

Source

Gate

Drain

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DMN2104L

Document number: DS31560 Rev. 1 - 2

2 of 4

www.diodes.com

October 2008

DMN2104L

NEW PRODUCT

0

4

8

12

16

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.5V

GS

V = 2.0V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 10V

GS

V = 2.5V

GS

0

2

4

6

8

10

12

14

16

0.5 1 1.5 2 2.5 3 3.5

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 5V

DS

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.11

0.12

0246 810121416

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

GS

V = 10V

GS

V = 2.5V

GS

0.02

0.04

0.06

0.08

0.1

04 81216

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AI

N

-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DSON

V = 4.5V

I = 5A

GS

D

V = 10V

I = 10A

GS

D

0.4

0.6

0.8

1.0

1.2

1.4

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 250µA

D

I = 1mA

D

DMN2104L

Document number: DS31560 Rev. 1 - 2

3 of 4

www.diodes.com

October 2008

DMN2104L

NEW PRODUCT

0

4

8

12

16

0.4 0.6 0.8 1 1.2 1.4

Fig. 7 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

0

100

200

300

400

500

600

0 5 10 15 20 25

Fig. 8 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

I

T

AN

C

E (p

F

)

C

iss

C

rss

C

oss

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig. 9 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12

θ

R (t) = r(t) *

θ

JA

R

R = 170°C/W

θ

JA

P(pk)

t

1

t

2

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

Ordering Information (Note 7)

Part Number Case Packaging

DMN2104L-7 SOT-23 3000/Tape & Reel

Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MN2 = Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

MN2

YM

DMN2104L-7

DMN2104L-7

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