NCV4299C
www.onsemi.com
4
MAXIMUM RATINGS
Rating Symbol Min Max Unit
Input Voltage to Regulator (DC) V
I
−40 45 V
Input Peak Transient Voltage to Regulator wrt GND (Note 1) 60 V
Inhibit (INH) V
INH
−40 45 V
Sense Input (SI) V
SI
−40 45 V
Sense Input (SI) I
SI
−1.0 1.0 mA
Reset Threshold (RADJ) V
RADJ
−0.3 7.0 V
Reset Threshold (RADJ) I
RADJ
−10 10 mA
Reset Delay (D) V
D
−0.3 7.0 V
Reset Output (RO) V
RO
−0.3 7.0 V
Reset Output (RO) I
RO
−20 20 mA
Sense Output (SO) V
SO
−0.3 7.0 V
Output (Q) V
Q
−0.3 16 V
Output (Q) I
Q
−5.0 mA
ESD Capability, Human Body Model (Note 3) ESD
HB
2.0 kV
ESD Capability, Machine Model (Note 3) ESD
MM
200 V
ESD Capability, Charged Device Model (Note 3) ESD
CDM
1.0 kV
Junction Temperature T
J
150 °C
Storage Temperature T
stg
−50 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING RANGE
Input Voltage 5.0 V Version
3.3 V Version
V
I
5.5
4.4
45
45
V
Junction Temperature T
J
−40 150 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
LEAD TEMPERATURE SOLDERING REFLOW (Note 2)
Reflow (SMD styles only), lead free 60 s−150 sec above 217, 40 sec max at peak
T
SLD
265 Pk °C
Moisture Sensitivity Level SO−8
SO−14
MSL Level 1
Level 1
1. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in
production. Passed Class C according to ISO16750−1
2. Per
IPC / JEDEC J−STD−020C.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (JS−001−2010)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD CDM tested per AEC−Q100−011 (EIA/JESD22−C101).
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Value)
Unit
Note 4 Note 5 Note 6
Thermal Characteristics, SO−8 Junction−to−Lead (y
JLx
, q
JLx
)
Junction−to−Ambient (R
θ
JA
, q
JA
)
72
198
58
150.7
58.3
124.5
°C/W
Thermal Characteristics, SO−14 Junction−to−Lead (y
JLx
, q
JLx
)
Junction−to−Ambient (R
θ
JA
, q
JA
)
15.1
142.7
19.9
101.2
19.3
86.1
°C/W
Thermal Characteristics, TSSOP−14 EP Junction−to−Tab (y
JLx
, q
JLx
)
Junction−to−Ambient (R
θ
JA
, q
JA
)
9.7
111.6
11.4
78.7
11.7
53.7
°C/W
4. 2 oz Copper, 50 mm sq Copper area, 1.5 mm thick FR4.
5. 2 oz Copper, 150 mm sq Copper area, 1.5 mm thick FR4.
6. 2 oz Copper, 500 mm sq Copper area, 1.5 mm thick FR4.
NCV4299C
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS (−40°C < T
J
< 150°C; V
I
= 13.5 V unless otherwise noted.)
Characteristic Symbol Test Conditions Min Typ Max Unit
OUTPUT Q
Output Voltage (5.0 V Version)
V
Q
1.0 mA < I
Q
< 150 mA, 6.0 V < V
I
< 16 V 4.9 5.0 5.1 V
Output Voltage (3.3 V Version) V
Q
1.0 mA < I
Q
< 150 mA, 5.5 V < V
I
< 16 V 3.23 3.3 3.37 V
Current Limit I
Q
V
Q
= 90% of V
Qnom
250 430 500 mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
< 100 mA, T
J
= 25°C
80 90
mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
< 100 mA, T
J
125°C
80 95
mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
= 10 mA 200 500
mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH ON, I
Q
= 50 mA 0.8 2.0 mA
Quiescent Current (I
q
= I
I
– I
Q
) I
q
INH = 0 V, T
J
= 25°C 1.0
mA
Dropout Voltage (Note 7) V
dr
I
Q
= 100 mA 0.26 0.50 V
Load Regulation
DV
Q
I
Q
= 1.0 mA to 100 mA 1.0 30 mV
Line Regulation
DV
Q
V
I
= 6.0 V to 28 V, I
Q
= 1.0 mA 2.0 25 mV
Power Supply Ripple Rejection PSRR ƒr = 100 Hz, Vr = 1.0 Vpp, I
Q
= 100 mA 66 dB
INHIBIT (INH)
Inhibit Off Voltage
V
INHOFF
V
Q
< 0.1 V 0.8 V
Inhibit On Voltage
5.0 V Version
3.3 V Version
V
INHON
V
Q
> 4.9 V
V
Q
> 3.23 V
3.5
3.5
V
Input Current I
INHON
I
INHOFF
INH = 5 V
INH
= 0 V
3.8
0.01
10
2.0
mA
RESET (RO)
Switching Threshold
5.0 V Version
3.3 V Version
V
RT
4.50
2.96
4.67
3.07
4.80
3.16
V
Output Resistance R
RO
10 20 40
kW
Reset Output Low Voltage
5.0 V Version
3.3 V Version
V
RO
V
Q
= 4.5 V, Internal R
RO
, I
RO
= −1.0 mA
V
Q
= 2.96 V, Internal R
RO
, I
RO
= −1.0 mA
0.05
0.05
0.40
0.40
V
Allowable External Reset Pullup Resistor V
ROext
External Resistor to Q 5.6
kW
Delay Upper Threshold V
UD
1.5 1.85 2.2 V
Delay Lower Threshold V
LD
0.4 0.5 0.6 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Only for 5 V version. Measured when the output voltage V
Q
has dropped 100 mV from the nominal value obtained at V
I
= 13.5 V.
NCV4299C
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS (continued) (−40°C < T
J
< 150°C; V
I
= 13.5 V unless otherwise noted.)
Characteristic Symbol Test Conditions Min Typ Max Unit
RESET (RO)
Delay Output Low Voltage
5.0 V Version
3.3 V Version
V
D,sat
V
Q
= 4.5 V, Internal R
RO
V
Q
= 2.96 V, Internal R
RO
0.017
0.1
0.1
V
Delay Charge Current I
D
V
D
= 1.0 V 4.0 7.1 12
mA
Power On Reset Delay Time t
d
C
D
= 100 nF 17 28 35 ms
Reset Reaction Time t
RR
C
D
= 100 nF 0.5 1.6 4.0
ms
Reset Adjust Switching Threshold
5.0 V Version
3.3 V Version
V
RADJ,TH
V
Q
= 3.5 V
V
Q
= 2.3 V
1.26
1.26
1.36
1.36
1.44
1.44
V
INPUT VOLTAGE SENSE (SI and SO)
Sense Input Threshold High
V
SI,High
1.34 1.45 1.54 V
Sense Input Threshold Low V
SI,Low
1.26 1.36 1.44 V
Sense Input Hysteresis (Sense Threshold High) −
(Sense Threshold Low)
50 90 130 mV
Sense Input Current I
SI
V
SI
= 1.2 V −1.0 0.1 1.0
mA
Sense Output Resistance R
SO
10 20 40
kW
Sense Output Low Voltage V
SO
V
SI
= 1.2 V, V
I
= 5.5 V, I
SO
= 0 mA
0.1 0.4 V
Allowable External Sense Out
Pullup Resistor
R
SOext
5.6
kW
SI High to SO High Reaction Time t
PSOLH
R
SOext
= 5.6 kW
1.3 8.0
ms
SI Low to SO Low Reaction Time t
PSOHL
R
SOext
= 5.6 kW
2.2 5.0
ms
THERMAL SHUTDOWN
Thermal Shutdown Temperature (Note 8)
T
SD
I
out
= 1 mA 150 200 °C
8. Values based on design and/or characterization.
NCV4299C
I
INH
D
RADJ
SI
Q
RO
SO
GND
I
I
I
INH
I
D
C
D
100 nF
I
RADJ
I
SI
V
RADJ
V
SI
V
INH
V
I
I
Q
V
Q
V
RO
V
SO
I
q
Figure 3. Measurement Circuit

NCV4299CD233R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators 3.3V 150MA LDO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union