IXFP16N60P3 Datasheet IXFP16N60P3, IXFA16N60P3, IXFH16N60P3 | P1-P3

DS100419C(6/18)

Polar3

TM

HiPerFET

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFA16N60P3

IXFP16N60P3

IXFH16N60P3

V

DSS

= 600V

I

D25

= 16A

R

DS(on)



 470m





Features



International Standard Packages



Fast Intrinsic Rectifier



Avalanche Rated



Low R

DS(ON)

and Q

G



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 600 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 600 V

V

GSS

Continuous 30 V

V

GSM

Transient 40 V

I

D25

T

C

= 25C16A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

40 A

I

A

T

C

= 25C8A

E

AS

T

C

= 25C 800 mJ

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150C 35 V/ns

P

D

T

C

= 25C 347 W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

Plastic Body for 10s 260 °C

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb

M

d

Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1.5mA 3.0 5.0 V

I

GSS

V

GS

= 30V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 A

T

J

= 125C 1.5 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 470 m

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-263 (IXFA)

G

S

TO-220 (IXFP)

D (Tab)

S

G

D

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA16N60P3 IXFP16N60P3

IXFH16N60P3

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 10 17 S

R

Gi

Gate Input Resistance 2.3 

C

iss

1830 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 217 pF

C

rss

8.6 pF

t

d(on)

20 ns

t

r

13 ns

t

d(off)

42 ns

t

f

8 ns

Q

g(on)

36 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

9 nC

Q

gd

13 nC

R

thJC

0.36 C/W

R

thCS

TO-220 0.50 C/W

TO-247 0.21 C/W

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 5 (External)

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

I

S

V

GS

= 0V, Note1 16 A

I

SM

Repetitive, pulse Width Limited by T

JM

48 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

250 ns

Q

RM

0.7 C

I

RM

7.6 A

I

F

= 8A, -di/dt = 100A/μs

V

R

= 100V

IXFA16N60P3 IXFP16N60P3

IXFH16N60P3

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

2

4

6

8

10

12

14

16

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

6V

5V

7V

Fig. 3. Output Characteristics @ T

J

= 125

o

C

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12 14 16

V

DS

- Volts

I

D

- Amperes

4V

6V

5V

V

GS

= 10V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 8A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 16A

I

D

= 8A

Fig. 5. R

DS(on)

Normalized to I

D

= 8A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 5 10 15 20 25 30 35 40

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 25

o

C

T

J

= 125

o

C

Fig. 6. Maximum Drain Current vs. Case Temperature

0

2

4

6

8

10

12

14

16

18

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFP16N60P3

IXFP16N60P3

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