Philips Semiconductors Product specification
TrenchMOS transistor BUK7514-55A
Standard level FET BUK7614-55A
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA; 55 - - V
voltage T
j
= -55˚C 50 - - V
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 2 3 4 V
T
j
= 175˚C 1 - - V
T
j
= -55˚C - - 4.4 V
I
DSS
Zero gate voltage drain current V
DS
= 55 V; V
GS
= 0 V; - 0.05 10 µA
T
j
= 175˚C - - 500 µA
I
GSS
Gate source leakage current V
GS
= ±20 V; V
DS
= 0 V - 2 100 nA
R
DS(ON)
Drain-source on-state V
GS
= 10 V; I
D
= 25 A - 12 14 mΩ
resistance T
j
= 175˚C - - 28 mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 1848 2464 pF
C
oss
Output capacitance - 421 506 pF
C
rss
Feedback capacitance - 231 317 pF
t
d on
Turn-on delay time V
DD
= 30 V; R
load
=1.2Ω; - 17 26 ns
t
r
Turn-on rise time V
GS
= 5 V; R
G
= 10 Ω - 79 119 ns
t
d off
Turn-off delay time - 57 80 ns
t
f
Turn-off fall time - 51 71 ns
L
d
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
L
d
Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die(SOT404)
L
s
Internal source inductance Measured from source lead to - 7.5 - nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
Continuous reverse drain - - 73 A
current
I
DRM
Pulsed reverse drain current - - 266 A
V
SD
Diode forward voltage I
F
= 25 A; V
GS
= 0 V - 0.85 1.2 V
I
F
= 73 A; V
GS
= 0 V - 1.1 - V
t
rr
Reverse recovery time I
F
= 73 A; -dI
F
/dt = 100 A/µs; - 54 - ns
Q
rr
Reverse recovery charge V
GS
= -10 V; V
R
= 30 V - 0.12 - µC
July 2000 2 Rev 1.000