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DMC1029UFDB-7

P1-P3P4-P6P7-P9
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
1 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC1029UFDB
NEW PROD UCT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON) max
Q1
N-Channel
12V
29mΩ @ V
GS
= 4.5V
34mΩ @ V
GS
= 2.5V
44mΩ @ V
GS
= 1.8V
65mΩ @ V
GS
= 1.5V
Q2
P-Channel
-12V
61mΩ @ V
GS
= -4.5V
81mΩ @ V
GS
= -2.5V
115mΩ @ V
GS
= -1.8V
210mΩ @ V
GS
= -1.5V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC1029UFDB -7
U-DFN2020-6
3000/Tape & Reel
DMC1029UFDB -13
U-DFN2020-6
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
e4
Bottom View
Internal Schematic
2D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
S1
G1
D2
S2
G2
D1
D2
Pin1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
U-DFN2020-6
D1
D
1
S
1
G
1
D
2
S
2
G
2
2D
YM
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
2 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC1029UFDB
NEW PROD UCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Q1
N-CHANNEL
Q2
P-CHANNEL
Units
Drain-Source Voltage
V
DSS
12
-12
V
Gate-Source Voltage
V
GSS
±8
±8
V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25C
T
A
= +70C
I
D
5.6
4.4
-3.8
-3.0
A
t < 5s
T
A
= +25C
T
A
= +70C
I
D
7.2
5.8
-5.0
-4.0
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
1
-1
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
I
DM
20
-15
A
Avalanche Current (L = 0.1mH)
I
AS
15
-12
A
Avalanche Energy (L = 0.1mH)
E
AS
12
8
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Steady State
P
D
1.4
W
t < 5s
2.2
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
91
°C/W
t < 5s
55
Thermal Resistance, Junction to Case
R
θJC
20
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Note: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
3 of 9
www.diodes.com
February 2015
© Diodes Incorporated
DMC1029UFDB
NEW PROD UCT
Electrical Characteristics Q1 N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
12
—
—
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
1.0
μA
V
DS
= 12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100
nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(TH)
0.4
—
1
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
17
29
mΩ
V
GS
= 4.5V, I
D
= 5A
—
20
34
V
GS
= 2.5V, I
D
= 4.6A
—
24
44
V
GS
= 1.8V, I
D
= 4.1A
—
30
65
V
GS
= 1.5V, I
D
= 2A
Diode Forward Voltage
V
SD
—
0.6
1.2
V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
914
—
pF
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
132
—
pF
Reverse Transfer Capacitance
C
rss
—
119
—
pF
Gate Resistance
R
g
—
1.26
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
10.5
—
nC
V
DS
= 6V, I
D
= 6.5A
Total Gate Charge (V
GS
= 8V)
—
19.6
—
nC
Gate-Source Charge
Q
gs
—
1.2
—
nC
Gate-Drain Charge
Q
gd
—
1.6
—
nC
Turn-On Delay Time
t
D(ON)
—
5.0
—
ns
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.2Ω, R
G
= 1Ω
Turn-On Rise Time
t
R
—
10.5
—
ns
Turn-Off Delay Time
t
D(OFF)
—
16.6
—
ns
Turn-Off Fall Time
t
F
—
4.1
—
ns
Electrical Characteristics Q2 P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12
—
—
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
—
—
-1.0
μA
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100
nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(TH)
-0.4
—
-1
V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
37
61
mΩ
V
GS
= -4.5V, I
D
= -3.6A
—
47
81
V
GS
= -2.5V, I
D
= -3.2A
—
63
115
V
GS
= -1.8V, I
D
= -1A
—
90
210
V
GS
= -1.5V, I
D
= -1A
Diode Forward Voltage
V
SD
—
-0.65
-1.2
V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
—
915
—
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
225
—
pF
Reverse Transfer Capacitance
C
rss
—
183
—
pF
Gate Resistance
R
g
—
56.9
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
—
10.7
—
nC
V
DS
= -6V, I
D
= -4.3A
Total Gate Charge (V
GS
= -8V)
—
17.9
—
nC
Gate-Source Charge
Q
gs
—
1.7
—
nC
Gate-Drain Charge
Q
gd
—
3.0
—
nC
Turn-On Delay Time
t
D(ON)
—
5.7
—
ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
Turn-On Rise Time
t
R
—
11.5
—
ns
Turn-Off Delay Time
t
D(OFF)
—
27.8
—
ns
Turn-Off Fall Time
t
F
—
26.4
—
ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
P1-P3P4-P6P7-P9

DMC1029UFDB-7

Mfr. #:
Buy DMC1029UFDB-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V Comp Pair Enh 8Vgs 914pF 10.5nC
Lifecycle:
New from this manufacturer.
Delivery:
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