KSE5740TU

©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

KSE5740/5741/5742

NPN Silicon Darlington Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

* PW=5ms, Duty Cycle=10%

Symbol Parameter Value Units

BV

CEO

(sus) Collector-Emitter Sustaining Voltage

: KSE5740

: KSE5741

: KSE5742

300

350

400

V

V

V

V

CEV

Collector-Emitter Voltage : KSE5740

: KSE5741

: KSE5742

600

700

800

V

V

V

V

EBO

Emitter-Base Voltage 8 V

I

C

Collector Current (DC) 8 A

I

CP

*Collector Current (Pulse) 16 A

I

B

Base Current (DC) 2.5 A

I

BP

*Base Current (Pulse) 5 A

P

C

Collector Dissipation 80 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 65 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

V

CEO

(sus)

Collector-Emitter Sustaining Voltage

: KSE5740

: KSE5741

: KSE5742

I

C

= 50mA, I

B

=0 300

350

400

V

V

V

I

CEV

Collector Cut-off Current V

CEV

=Rate Value, V

BE(OFF)

=1.5V 1 mA

I

EBO

Emitter Cut-off Current V

EB

= 8V, I

C

= 0 75 mA

h

FE

DC Current Gain V

CE

=5V, I

C

= 0.5A

V

CE

=5V, I

C

= 4A

50

200

100

400

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=4A, I

B

= 0.2A

I

C

=8A, I

B

= 0.4A

2

3

V

V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

=4A, I

B

= 0.2A

I

C

=8A, I

B

= 0.4A

2.5

3.5

V

V

V

F

Diode Forward Voltage I

F

=5A 2.5 V

t

D

Delay Time V

CC

= 250V, I

C

(pk) = 6A

I

B1

= I

B2

= 0.25A

t

P

= 25µs

Duty Cycle≤1%

0.04 µs

t

R

Rise Time 0.5 µs

t

S

Storage Time 8 µs

t

F

Fall Time 2 µs

t

SV

Voltage Storage Time I

C

(pk) = 6A, V

CE

(pk) = 250V

I

B

1= 0.06A, V

BE

(off) = 5V

4 µs

t

C

Cross-over Time 2 µs

KSE5740/5741/5742

High Voltage Power Switching In Inductive

Circuits

• High Voltage Power Darlington TR

• Small Engine lgnition

• Switching Regulators

• Inverters

• Solenold and Relay Drivers

• Motor Control

1.Base 2.Collector 3.Emitter

1

TO-220

©2001 Fairchild Semiconductor Corporation

KSE5740/5741/5742

Rev. A1, June 2001

Typical Characteristics

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 3. Turn On Time Figure 4. Turn Off Time

Figure 5. Safe Operating Area Figure 6. Reverse Bias Safe Operating Area

0.1 1 10

10

100

1000

V

CE

= 5V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

10

I

C

= 20 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.1 1 10

0.01

0.1

1

10

V

CC

= 250V

I

C

= 20I

B

I

B1

= I

B2

t

D

t

R

t

R

,t

D

[µs],TURN ON TIME

I

C

[A], COLLECTOR CURRENT

0.1 1 10

0.1

1

10

V

CC

= 250V

I

C

= 20I

B

I

B1

= I

B2

t

F

t

STG

t

STG

,t

F

[µs],TURN OFF TIME

I

C

[A], COLLECTOR CURRENT

1 10 100 1000

0.01

0.1

1

10

100

5ms

10

µ

s

E5740

E5741

E5742

100

µ

s

1ms

DC

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 100 200 300 400 500

0

4

8

12

16

20

I

C

[A], COLLECTOR CURRENT

E5740

E5741

E5742

V

BE

(off)= -5V

V

CE

[V],COLLECTOR EMITTER VOLTAGE

©2001 Fairchild Semiconductor Corporation

KSE5740/5741/5742

Rev. A1, June 2001

Typical Characteristics

(Continued)

Figure 1. Power Derating

0 255075100125150175

0

10

20

30

40

50

60

70

80

90

100

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

KSE5740TU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Darlington Transistors NPN Si Transistor Darlington

Lifecycle:

New from this manufacturer.

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