IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP22N65X2M
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 22 A
I
SM
Repetitive, pulse Width Limited by T
JM
88 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
145 ns
Q
RM
890 nC
I
RM
12 A
I
F
= 11A, -di/dt = 100A/μs
V
R
= 100V
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 11A, Note 1 8 22 S
R
Gi
Gate Input Resistance 1.0
C
iss
2190 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1450 pF
C
rss
1.3 pF
C
o(er)
92 pF
C
o(tr)
330 pF
t
d(on)
30 ns
t
r
37 ns
t
d(off)
42 ns
t
f
18 ns
Q
g(on)
37 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 11A 12 nC
Q
gd
14 nC
R
thJC
3.37 C/W
R
thCS
0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 11A
R
G
= 10 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Drain
3 - Source
1
2
3
OVERMOLDED TO-220
(IXFP...M)
oP
