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IXFP34N65X2M

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP22N65X2M
Fig. 10. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 11A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1
10
100
1000
10000
100000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
16
18
20
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
Fig. 7. Input Admittance
0
4
8
12
16
20
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
4
8
12
16
20
24
0 2 4 6 8 10 12 14 16 18 20 22
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_22N65X2M(X4-S602) 3-24-17
IXFP22N65X2M
Fig. 14. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
25μs
100μs
R
DS(
on
)
Limit
1ms
10ms
P1-P3P4-P5

IXFP34N65X2M

Mfr. #:
Buy IXFP34N65X2M
Manufacturer:
Littelfuse
Description:
MOSFET 650V/34A OVERMOLDED TO-220
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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