2STN2540-A

P1-P3 P4-P6 P7-P9

January 2008 Rev 2 1/9

9

2STN2540-A

Low voltage fast-switching PNP power bipolar transistor

Features

■ The device is qualified for automotive

application

■ Very low collector-emitter saturation voltage

■ High current gain characteristic

■ Fast switching speed

■ Surface mounting device in medium power

SOT-223 package

Applications

■ Emergency lighting

■ LED

■ CCFL drivers (back lighting)

■ Voltage regulation

■ Relay driver

Description

The device in a PNP transistor manufactured

using new “PB-HCD” (Power Bipolar High Current

Density) technology. The resulting transistor

shows exceptional high gain performances

coupled with very low saturation voltage.

Figure 1. Internal schematic diagram

Table 1. Device summary

1

2

4

3

SOT-223

Order code Marking Package Packaging

2STN2540-A N2540 SOT-223 Tape & reel

www.st.com

Obsolete Product(s) - Obsolete Product(s)

Electrical ratings 2STN2540-A

2/9

1 Electrical ratings

Table 3. Thermal data

Table 2. Absolute maximum rating

Symbol Parameter Value Unit

V

CBO

Collector-base voltage (I

E

= 0) -40 V

V

CEO

Collector-emitter voltage (I

B

= 0) -40 V

V

EBO

Emitter-base voltage (I

C

= 0) -6 V

I

C

Collector current -5 A

I

CM

Collector peak current (t

P

< 5ms) -10 A

I

BM

Base peak current (t

P

< 5ms) -2 A

P

tot

Total dissipation at T

amb

= 25°C 1.6 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Symbol Parameter Value Unit

R

thj-amb

(1)

1. Device mounted on PCB area of 1cm

2

Thermal resistance junction-amb __max 78 °C/W

Obsolete Product(s) - Obsolete Product(s)

2STN2540-A Electrical characteristics

3/9

2 Electrical characteristics

(T

case

= 25 °C unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

Collector cut-off current

(I

E

=0)

V

CB

= -30 V

-0.1 µA

I

EBO

Emitter cut-off current

(I

C

=0)

V

EB

= -5 V

-0.1 µA

V

CE(sat)

(1)

1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%

Collector-emitter

saturation voltage

I

C

= -0.5 A I

B

= -5 mA

I

C

= -1 A I

B

= -10 mA

I

C

= -2 A I

B

= -200 mA

I

C

= -5 A I

B

= -500 mA

-80

-120

-140

-350

-120

-180

-200

-450

mV

mV

mV

mV

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= -5 A I

B

= -500 mA

-1.3 V

V

BE(on)

(1)

Base-emitter on voltage

V

CE

= -2 V I

C

= -2 A

-1.25 V

h

FE

(1)

DC current gain

I

C

= -0.5 A V

CE

= -2 V

I

C

= -1 A V

CE

= -2 V

I

C

= -2 A V

CE

= -2 V

I

C

= -5 A V

CE

= -2 V

250

200

150

50

C

CBO

Collector-base

capacitance

I

E

= 0 V

CB

= -10 V

f = 1MHz

80 pF

t

on

t

s

t

f

Resistive load

Turn-on time

Storage time

Fall time

I

C

= -1 A _ V

CC

= -10 V

-I

B1

= I

B2

= -0.1 A

T

p

= 30 µA

75

426

62

ns

ns

ns

Obsolete Product(s) - Obsolete Product(s)

P1-P3 P4-P6 P7-P9

2STN2540-A

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

TRANS PNP 40V 5A SOT-223

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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Products related to this Datasheet

2STN2540-A