OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

2N7000RLRMG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 7
1 Publication Order Number:
2N7000/D
2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N-Channel TO-92
Features
•AEC Qualified
•PPAP Capable
•Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage V
DSS
60 Vdc
Drain-Gate Voltage (R
GS
= 1.0 MW)
V
DGR
60 Vdc
Gate-Source Voltage
- Continuous
- Non-repetitive (t
p
≤ 50 ms)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current
- Continuous
- Pulsed
I
D
I
DM
200
500
mAdc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Operating and Storage Temperature
Range
T
J
, T
stg
-55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Ambient
R
q
JA
357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
T
L
300 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
G
N-Channel
S
1
Source
3
Drain
2
Gate
200 mAMPS
60 VOLTS
R
DS(on)
= 5 W
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
AND PIN ASSIGNMENT
2N
7000
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO-92
CASE 29
STYLE 22
2N7000
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V
GS
= 0, I
D
= 10 mAdc)
V
(BR)DSS
60 - Vdc
Zero Gate Voltage Drain Current
(V
DS
= 48 Vdc, V
GS
= 0)
(V
DS
= 48 Vdc, V
GS
= 0, T
J
= 125°C)
I
DSS
-
-
1.0
1.0
mAdc
mAdc
Gate-Body Leakage Current, Forward (V
GSF
= 15 Vdc, V
DS
= 0) I
GSSF
- -10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0 mAdc) V
GS(th)
0.8 3.0 Vdc
Static Drain-Source On-Resistance
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
r
DS(on)
-
-
5.0
6.0
W
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
V
DS(on)
-
-
2.5
0.45
Vdc
On-State Drain Current (V
GS
= 4.5 Vdc, V
DS
= 10 Vdc) I
d(on)
75 - mAdc
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 200 mAdc) g
fs
100 -
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 V, V
GS
= 0,
f = 1.0 MHz)
C
iss
- 60
pF
Output Capacitance C
oss
- 25
Reverse Transfer Capacitance C
rss
- 5.0
SWITCHING CHARACTERISTICS (Note 1)
Turn-On Delay Time
(V
DD
= 15 V, I
D
= 500 mA,
R
G
= 25 W, R
L
= 30 W, V
gen
= 10 V)
t
on
- 10
ns
Turn-Off Delay Time t
off
- 10
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device Package Shipping
†
2N7000 TO-92 1000 Units / Bulk
2N7000G TO-92
(Pb-Free)
1000 Units / Bulk
2N7000RLRA TO-92 2000 Tape & Reel
2N7000RLRAG TO-92
(Pb-Free)
2000 Tape & Reel
2N7000RLRMG TO-92
(Pb-Free)
2000 Tape & Ammo Box
2N7000RLRPG TO-92
(Pb-Free)
2000 Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N7000
http://onsemi.com
3
I
D
, DRAIN CURRENT (AMPS)
r
DS(on)
, STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS(th)
, THRESHOLD VOLTAGE (NORMALIZED)
I
D
, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain-Source On-Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
T
A
= 25°C
V
GS
= 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
V
DS
= 10 V
-55°C
25°C
125°C
V
GS
= 10 V
I
D
= 200 mA
V
DS
= V
GS
I
D
= 1.0 mA
P1-P3P4-P4

2N7000RLRMG

Mfr. #:
Buy 2N7000RLRMG
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 200MA TO-92
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet