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SFH 4775S

P1-P3P4-P6P7-P9P10-P12P13-P13
2018-02-05 1
Preliminary – For Reference only.
Subject to change.
2018-0 2-05
IR SYNIOS P2720 (940 nm) - 120°
Preliminary Version 0.0
SFH 4775S
Ordering Information
Features:
• IR lightsource with high efficiency
• Double Stack emitter
• Low thermal resistance (Max. 9 K/W)
• Centroid wavelength 940 nm
• Superior Corrosion Robustness (see chapter package outlines)
Applications
• Infrared Illumination for cameras
• Eye tracking systems
• Not released for automotive applications
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Type: Total Radiant Flux Ordering Code
Φ
e
[mW]
I
F
= 1A, t
p
= 10 ms
SFH 4775S 1150 (≥ 800) Q65112A4691
Note: Measured with integrating sphere.
2018-02-05 2
Preliminary – For Reference only.
Subject to change.
Preliminary Version 0.0 SFH 4775S
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operating temperature range T
op
-40 ... 100 °C
Storage temperature range T
stg
-40 ... 100 °C
Junction temperature T
j
145 °C
Forward current I
F
1500 mA
Surge current
(t
p
≤ 1.5 ms, D = 0.005)
I
FSM
3 A
Power consumption P
tot
5800 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2 kV
Thermal resistance junction - solder point R
thJS
9 K / W
Note: For the forward current and power consumption please see "maximum permissible forward current" diagram
Parameter Symbol Values Unit
Peak wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) λ
peak
950 nm
Centroid wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) λ
centroid
940 nm
Spectral bandwidth at 50% of I
max
(I
F
= 1 A, t
p
= 10 ms)
(typ) ∆λ 37 nm
Half angle (typ) ϕ ± 60 °
Dimensions of active chip area (typ) L x W 1 x 1 mm x
mm
Rise and fall times of I
e
( 10% and 90% of I
e max
)
(I
F
= 3 A, R
L
= 50 Ω)
(typ) t
r
/ t
f
11 / 14 ns
Forward voltage
(I
F
= 1 A, t
p
= 10 ms)
(typ (max)) V
F
2.8 (≤ 3.6) V
Forward voltage
(I
F
= 1.5 A, t
p
= 100 µs)
(typ (max)) V
F
2.95 (≤ 3.85) V
Forward voltage
(I
F
= 3 A, t
p
= 100 µs)
(typ ) V
F
3.3 (≤ 4.7) V
Reverse current
(V
R
= 5 V)
I
R
not designed for
reverse operation
µA
Radiant intensity
(I
F
= 1 A, t
p
= 10 ms)
I
e, typ
360 mW/sr
Preliminary Version 0.0 SFH 4775S
2018-02-05 3
Preliminary – For Reference only.
Subject to change.
Grouping (T
A
= 25 °C)
Radiant intensity
(I
F
= 1.5 A, t
p
= 100 µs)
I
e, typ
545 mW/sr
Temperature coefficient of I
e
or Φ
e
(I
F
= 1 A, t
p
= 10 ms)
(typ) TC
I
-0.3 % / K
Temperature coefficient of V
F
(I
F
= 1 A, t
p
= 10 ms)
(typ) TC
V
-2 mV / K
Temperature coefficient of wavelength
(I
F
= 1 A, t
p
= 10 ms)
(typ) TC
λ,
centroid
0.3 nm / K
Group Min Total Radiant Flux Max Total Radiant Flux
I
F
= 1A, t
p
= 10 ms I
F
= 1A, t
p
= 10 ms
Φ
e min
[mW] Φ
e max
[mW]
SFH 4775S - EB1 800 1120
SFH 4775S - EB2 900 1250
SFH 4775S - FA1 1000 1400
SFH 4775S - FA2 1120 1600
Note: Only one group in one packing unit (variation lower 1.6:1).
Parameter Symbol Values Unit
P1-P3P4-P6P7-P9P10-P12P13-P13

SFH 4775S

Mfr. #:
Buy SFH 4775S
Manufacturer:
OSRAM Opto Semiconductors
Description:
Infrared Emitters - High Power Infrared, 940nm SYNIOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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