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STPS80L60CY

P1-P3P4-P4
1/4
STPS80L60CY
®
July 2003 - Ed: 4A
POWER SCHOTTKY RECTIFIER
I
F(AV)
2x40A
V
RRM
60 V
Tj (max) 150 °C
V
F
(max) 0.56 V
MAIN PRODUCT CHARACTERISTICS
■
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP
■
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for CAD
computers and servers.
Packaged in Max247, STPS80L60CY is intended
for use in low voltage, high frequency switching
power supplies, free wheeling and polarity
protection applications.
DESCRIPTION
Max247
A1
K
A2
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
RMS forward current 56 A
I
F(AV)
Average forward current Tc = 130°C
δ = 0.5
Per diode
Per device
40
80
A
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal 400 A
I
RRM
Repetitive peak reverse current tp=2µssquare F = 1kHz 2 A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C 20000 W
T
stg
Storage temperature range - 55 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
*:
dPtot
dTj Rth j a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
STPS80L60CY
2/4
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode 0.70 °C/W
Total 0.50
R
th (c)
Coupling 0.3
THERMAL RESISTANCES
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
* Reverse leakage current Tj = 25°C V
R
=V
RRM
1.8 mA
Tj = 125°C 0.4 0.9 A
V
F
* Forward voltage drop Tj = 25°CI
F
= 40 A 0.57 V
Tj = 125°C 0.50 0.56
Tj=25°CI
F
= 80 A 0.78
Tj = 125°C 0.69 0.77
Pulse test : * tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.36xI
F(AV)
+ 0.005 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
0
5
10
15
20
25
30
35
0 1020304050
IF(av)(A)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
δ
=tp/T
tp
P(W)
Fig. 1: Conduction losses versus average current.
0
5
10
15
20
25
30
35
40
45
0 25 50 75 100 125 150
Tamb(°C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS80L60CY
3/4
0
50
100
150
200
250
300
350
400
450
500
1.E-03 1.E-02 1.E-01 1.E+00
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
IM
t
δ=0.5
IM(A)
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Zth(j-c)/Rth(j-c)
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 5 10 15 20 25 30 35 40 45 50 55 60
VR(V)
Tj=125°C
Tj=25°C
Tj=75°C
Tj=100°C
Tj=50°C
IR(mA)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
0.1
1.0
10.0
100.0
1 10 100
VR(V)
F=1MHz
Vosc=30mV
Tj=25°C
C(pF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VFM(V)
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
IFM(A)
Fig. 9: Forward voltage drop versus forward
current.
P1-P3P4-P4

STPS80L60CY

Mfr. #:
Buy STPS80L60CY
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 2X40 Amp 60 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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