ZXGD3001E6TA

Issue 1 - October 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXGD3001E6
9A(peak) Gate driver in SOT23-6
General description
The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A
into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation
delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the
power MOSFET or IGBT to minimize power losses and distortion in high current fast switching
applications.
The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage
range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases
board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
12V operating voltage range
9 Amps peak output current
Fast switching emitter-follower configuration
3ns propagation delay time
11ns rise/fall time, 1000pF load
Low input current requirement
4.2A(source)/2.2A(sink) output current from 10mA input
SOT23-6 package
Separate source and sink outputs for independent control of rise and fall time
Optimized pin-out to ease board layout and minimize trace inductance
No Latch Up
No shoot through
Near - Zero quiescent and output leakage current
Typical application circuit
GND
SINK
V
CC
IN
1
IN
2
SOURCE
V
S
Input
V
CC
Input
ZXGD3001
ZXGD3001E6
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© Zetex Semiconductors plc 2007
Applications
Power MOSFET and IGBT Gate Driving in
Synchronous switch-mode power supplies
Secondary side synchronous rectification
Plasma Display Panel power modules
1, 2 and 3-phase motor control circuits
Audio switching amplifier power output stages
Pin configuration
Ordering information
Device marking
3001
Pin
Name
Pin Function
V
CC
Driver supply
IN
1
/ IN
2
Driver input pins. These are normally
connected together by circuit tracks.
GND Ground
SOURCE Source current output.
SINK Sink current output.
DEVICE Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXGD3001E6TA 7 8 embossed 3000
V
CC
IN
1
GND
SOT236
Top view
SOURCE
IN
2
SINK
ZXGD3001E6
Issue 1 - October 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For device with two active dice running at equal power.
(c) Pulse width <=300s limit repetition rate to comply with maximum junction temperature.
Parameter Symbol Limit Unit
Supply voltage V
CC
12 V
Input voltage V
IN
12 V
Peak sink current
(c)
I
(sink)PK
9A
Source current @ I
IN1
+ I
IN2
=10mA
(a)
I
(source)
4.2 A
Sink current @ I
IN1
+ I
IN2
=10mA
(a)
I
(sink)
2.2 A
Input current
(c)
I
IN1
, I
IN2
1A
Power dissipation at T
A
=25°C
(a)(b)
Linear derating factor
P
D
1.1
8.8
W
mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150
°C
Parameter Symbol Value Unit
Junction to ambient
(a)(b)
R
JA
113 °C/W

ZXGD3001E6TA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Gate Drivers 9A Gate Driver Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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