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SUP70060E-GE3

P1-P3P4-P6P7-P8
SUP70060E
www.vishay.com
Vishay Siliconix
S16-0244-Rev. A, 15-Feb-16
1
Document Number: 65382
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 100 V (D-S) MOSFET
Ordering Information:
SUP70060E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET
®
power MOSFET
• Maximum 175 °C junction temperature
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
•DC/DC converter
• Motor drive switch
• DC/AC inverter
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() MAX. I
D
(A) Q
g
(TYP.)
100
0.0058 at V
GS
= 10 V 131
53.5 nC
0.0064 at V
GS
= 7.5 V 129
TO-220AB
Top View
S
S
D
G
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
131
A
T
C
= 125 °C 75
Pulsed Drain Current (t = 100 μs) I
DM
240
Avalanche Current
L = 0.1 mH
I
AS
50
Single Avalanche Energy
a
E
AS
125 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
200
b
W
T
C
= 125 °C 66.6
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
0.75
SUP70060E
www.vishay.com
Vishay Siliconix
S16-0244-Rev. A, 15-Feb-16
2
Document Number: 65382
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 100 - -
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2 - 4
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V - - 1
μA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C - - 100
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C - - 2 mA
On-State Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V 90 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 30 A - 0.0048 0.0058
V
GS
= 7.5 V, I
D
= 30 A - 0.0050 0.0064
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A - 85 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V, V
DS
= 50 V, f = 1 MHz
- 3330 -
pFOutput Capacitance C
oss
- 1395 -
Reverse Transfer Capacitance C
rss
-95-
Total Gate Charge
c
Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 30 A
- 53.5 81
nCGate-Source Charge
c
Q
gs
- 14.5 -
Gate-Drain Charge
c
Q
gd
- 13.2 -
Gate Resistance R
g
f = 1 MHz 0.9 1.9 3.8
Turn-On Delay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 1.67
I
D
30 A, V
GEN
= 10 V, R
g
= 1
-1326
ns
Rise Time
c
t
r
-2244
Turn-Off Delay Time
c
t
d(off)
-2754
Fall Time
c
t
f
-918
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed Current (t = 100 μs) I
SM
--240A
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V - 0.86 1.4 V
Reverse Recovery Time t
rr
I
F
= 30 A, di/dt = 100 A/μs
- 88 176 ns
Peak Reverse Recovery Charge I
RM(REC)
-510A
Reverse Recovery Charge Q
rr
- 0.22 0.44 μC
SUP70060E
www.vishay.com
Vishay Siliconix
S16-0244-Rev. A, 15-Feb-16
3
Document Number: 65382
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
50
100
150
200
250
012345
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 7 V
V
GS
= 6 V
V
GS
= 4 V
V
GS
= 5 V
10
100
1000
10000
0
20
40
60
80
100
0 5.0 10.0 15.0 20.0 25.0 30.0
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
1200
2400
3600
4800
6000
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0
40
80
120
160
200
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0.003
0.004
0.005
0.006
0.007
0 20406080100
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 7.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0 1122334455
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
V
DS
= 25 V, 50 V, and 75 V
I
D
= 30 A
P1-P3P4-P6P7-P8

SUP70060E-GE3

Mfr. #:
Buy SUP70060E-GE3
Manufacturer:
Vishay
Description:
MOSFET N-CH 100V 131A TO-220
Lifecycle:
New from this manufacturer.
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