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MBR1100G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 7
1 Publication Order Number:
MBR1100/D
MBR1100
Axial Lead Rectifier
These rectifiers employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• High Surge Capacity
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(V
R(equiv)
≤ 0.2 V
R
(dc), R
q
JA
= 50°C/W,
P.C. Board Mounting, [see Note 3], T
A
= 120°C)
I
O
1.0 A
Peak Repetitive Forward Current
(V
R(equiv)
≤ 0.2 V
R
(dc), R
q
JA
= 50°C/W,
P.C. Board Mounting, [see Note 3], T
A
= 110°C)
I
FRM
2.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
50 A
Operating and Storage Junction Temperature
Range (Note 1)
T
J
, T
stg
−65 to
+175
°C
Voltage Rate of Change (Rated V
R
) dv/dt 10 V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY
BARRIER RECTIFIER
1.0 AMPERE, 100 VOLTS
MBR1100G Axial Lead
(Pb−Free)
1000 Units/Bag
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR1100RLG Axial Lead
(Pb−Free)
5000/Tape & Ree
l
DO−41
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
A
MBR1100
YYWW G
G
MBR1100
www.onsemi.com
2
THERMAL CHARACTERISTICS (See Note 4)
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
See Note 3 °C/W
ELECTRICAL CHARACTERISTICS (T
L
= 25°C unless otherwise noted)
Characteristic
Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1 A, T
L
= 25°C)
(i
F
= 1 A, T
L
= 100°C)
V
F
0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(T
L
= 25°C)
(T
L
= 100°C)
i
R
0.5
5.0
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current {
Figure 3. Current Derating
(Mounting Method 3 per Note 3)
Figure 4. Power Dissipation
0.6 0.90
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
20
10
2.0
5.0
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
60 900
0.2
0.04
0.02
0.01
120 1600
T
A
, AMBIENT TEMPERATURE (°C)
4.0
3.0
2.0
1.0
0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
1.00
4.0
3.0
2.0
1.0
0
2.0140
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
I
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
0.5
0.2
0.1
0.30.1 0.2 0.4 0.5 0.7 0.8 70 8010 20 30
40
50
0.1
0.4
1.0
20 40 60 80 100 3.0 4.0 5.0
0.05
0.02
1.1 1.41.0 1.2 1.3
100
, REVERSE CURRENT ( A)
R
m
4.0
2.0
10
20
100
40
200
1 K
400
200180
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
SQUARE WAVE
dc
SQUARE WAVE
dc
T
J
= 150°C
100°C
25°C
T
J
= 150°C
125°C
100°C
{ The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current for
lower voltage selections can be estimated from these
same curves if V
R
is sufficiently below rated V
R
.
MBR1100
www.onsemi.com
3
Figure 5. Typical Capacitance
20 400
V
R
, REVERSE VOLTAGE (VOLTS)
150
50
40
30
20
15
30
C, CAPACITANCE (pF)
50 10
0
60
100
10 70 80 90
70
60
90
80
T
J
= 25°C
f
TEST
= 1 MHz
NOTE 3 — MOUNTING DATA:
Data shown for thermal resistance junction−to−ambient
(R
q
JA)
for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Typical Values for R
q
JA
in Still Air
Mounting
Method
Lead Length, L (in)
R
q
JA
1/8 1/4 1/2 3/4
1 52 65 72 85 °C/W
2 67 80 87 100 °C/W
3 — 50 °C/W
Mounting Method 1
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
Mounting Method 3
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
BOARD GROUND
PLANE
Mounting Method 2
LL
LL
L = 3/8″
NOTE 4 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
T
A(A)
T
A(K)
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
P
D
R
q
S(A)
R
q
L(A)
R
q
J(A)
R
q
J(K)
R
q
L(K)
R
q
S(K)
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
T
A
= Ambient Temperature T
C
= Case Temperature
T
L
= Lead Temperature T
J
= Junction Temperature
R
q
S
= Thermal Resistance, Heat Sink to Ambient
R
q
L
= Thermal Resistance, Lead to Heat Sink
R
q
J
= Thermal Resistance, Junction to Case
P
D
= Power Dissipation
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
R
q
L
= 100°C/W/in typically and 120°C/W/in maximum.
R
q
J
= 36°C/W typically and 46°C/W maximum.
NOTE 5 — HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 5)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
P1-P3P4-P4

MBR1100G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 100V
Lifecycle:
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