IXFK180N10 Datasheet IXFK180N10 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 100 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 100 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C ( Chip Capabitlty) 180 A

I

LRMS

Leads Current Limit, RMS 160 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

720 A

I

A

T

C

= 25°C 180 A

E

AS

T

C

= 25°C3J

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 5 V/ns

P

D

T

C

= 25°C 560 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Force (PLUS247) 20..120/4.5..27 N/lb.

MountingTorque (TO-264) 1.13/10 Nm/lb.in.

Weight PLUS247 6 g

TO-264 10 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 100 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 2.0 4.0 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

100 μA

V

GS

= 0V T

J

= 125°C 2 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 8 mΩ

HiperFET

TM

Power

MOSFETs

Single MOSFET Die

IXFK180N10

IXFX180N10

V

DSS

= 100V

I

D25

= 180A

R

DS(on)

≤≤

≤ 8m

ΩΩ

Ω

G = Gate D = Drain

S = Source TAB = Drain

(TAB)

G

D

S

TO-264 (IXFK)

PLUS247 (IXFX)

(TAB)

DS98552D(02/09)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

z

International Standard Packages

z

High Current Handling Capability

z

Avalanche Rated

z

Low R

DS(on)

HDMOS

TM

Process

z

Fast intrinsic diode

z

Low Package Inductance

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switched-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

AC Motor Drives

z

Temperature and Lighting Controls

IXFK180N10

IXFX180N10

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 45 76 S

C

iss

10.90 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 3.55 nF

C

rss

1.94 nF

t

d(on)

50 ns

t

r

90 ns

t

d(off)

140 ns

t

f

65 ns

Q

g(on)

390 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

55 nC

Q

gd

195 nC

R

thJC

0.22 °C/W

R

thCS

0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 180 A

I

SM

Repetitive, Pulse Width Limited by T

JM

720 A

V

SD

I

F

= 100A, V

GS

= 0V, Note 1 1.5 V

t

rr

250 ns

Q

RM

1.1 μC

I

RM

13

A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1Ω (External)

I

F

= 90A, -di/dt = 100A/μs

V

R

= 50V, V

GS

= 0V

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247

TM

(IXFX) Outline

TO-264 (IXFK) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

IXFK180N10

IXFX180N10

IXYS REF: F_180N10(9X)2-24-09-B

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

5V

6V

7V

8V

Fig. 3. Output Characteristics

@ 125ºC

0

20

40

60

80

100

120

140

160

180

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

5V

6V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 90A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 180A

I

D

= 90A

Fig. 5. R

DS(on)

Normalized to I

D

= 90A Value

vs. Drain Current

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

0 30 60 90 120 150 180 210 240 270 300 330

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - - -

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXFK180N10

IXFK180N10

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