BD241C

BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
INTERNAL SCHEMATIC DIAGRAM
December 2000
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C
PNP BD242A BD242B BD242C
V
CER
Collector-Base Voltage (R
BE
= 100 )
70 90 115 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 60 80 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 3 A
I
CM
Collector Peak Current 5 A
I
B
Base Current 1 A
P
tot
Total Dissipation at T
c
25
o
C
40 W
P
tot
Total Dissipation at T
amb
25
o
C
2W
T
stg
Storage Temperature -65 to 150
o
C
1
2
3
TO-220
®
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= rated V
CEO
0.2 mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
for BD241A/BD242A V
CE
= 30 V
for BD241B/BD242B V
CE
= 60 V
for BD241C/BD242C V
CE
= 60 V
0.3
0.3
0.3
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 1 mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 3 A I
B
= 0.6 A 1.2 V
V
BE
Base-Emitter Voltage I
C
= 3 A V
CE
= 4 V 1.8 V
h
FE
DC Current Gain I
C
= 1 A V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
25
10
h
fe
Small Signal Current
Gain
I
C
= 0.5 A V
CE
= 10 V f = 1MHz
I
C
= 0.5 A V
CE
= 10 V f = 1KHz
3
20
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
BD241A/B/C/BD242A/B/C
2/4
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
BD241A/B/C/BD242A/B/C
3/4

BD241C

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Pwr Transistors
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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