KSC2787OTA

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSC2787

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 50 V

V

CEO

Collector-Emitter Voltage 30 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 50 mA

P

C

Collector Power Dissipation 250 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=10µA, I

E

=0 50 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 30 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=10µA, I

C

=0 5 V

I

CBO

Collector Cut-off Current V

CB

=50V, I

E

=0 0.1 µA

I

EBO

Emitter Cut-off Current V

EB

=5V, I

C

=0 0.1 µA

h

FE

DC Current Gain V

CE

=6V, I

C

=1mA 40 240

V

BE

(on) Base-Emitter On Voltage V

CE

=6V, I

C

=1mA 0.67 0.75 V

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=10mA, I

B

=1mA 0.08 0.3 V

f

T

Current Gain Bandwidth Product V

CE

=6V, I

C

=1mA 150 300 MHz

C

ob

Output Capacitance V

CB

=6V, I

E

=0, f=1MHz 2.0 2.5 pF

Classification R O Y

h

FE

40 ~ 80 70 ~ 140 120 ~ 240

KSC2787

FM/AM RF AMP, MIX, CONV, OSC, IF

• Collector-Emitter Voltage : V

CEO

=30V

• High Current Gain Bandwidth Product : f

T

=300MHz (TYP)

• Low Output Capacitance : C

ob

=2.0pF (TYP)

1.Emitter 2. Collector 3. Base

TO-92S

1

©2002 Fairchild Semiconductor Corporation

KSC2787

Rev. A2, September 2002

Typical Characteristics

Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage

Figure 3. DC Current Gain Figure 4. Saturation Voltage

Figure 5. f

T

- I

C

Figure 6. Output Capacitance

0 4 8 12 16 20 24

0

4

8

12

16

I

B

= 50

µ

A

I

B

= 20

µ

A

I

B

= 70

µ

A

I

B

= 60

µ

A

I

B

= 40

µ

A

I

B

= 30

µ

A

I

B

= 10

µ

A

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.2 0.4 0.6 0.8 1.0 1.2

0.1

1

10

100

1000

V

CE

= 6V

I

C

[mA], COLLECTOR CURRENT

V

BE

[mV], SATURATION VOLTAGE

0.1 1 10 100

10

100

1000

V

CE

= 6V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

CE

(sat), V

BE

(sat) [V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

10

100

1000

V

CE

= 6V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

0.1

1

10

f = 1MHz

I

E

= 0

Cob

Cib

C

ob

[pF], OUTPUT CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

4.00

±0.20

3.72

±0.20

2.86

±0.20

2.31

±0.20

3.70

±0.20

0.77

±0.10

14.47

±0.30

(1.10)

0.49

±0.10

1.27TYP

[1.27±0.20] [1.27±0.20]

1.27TYP

0.66 MAX.

0.35

+0.10

–0.05

TO-92S

Package Dimensions

KSC2787

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSC2787OTA

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

RF Bipolar Transistors NPN/30V/150MHZ

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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