DMG1024UV-7 Datasheet DMG1024UV-7 | P1-P3

DMG1024UV

Document number: DS31974 Rev. 5 - 2

1 of 6

www.diodes.com

April 2010

DMG1024UV

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected Up To 2KV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Terminals: Finish ۛ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.006 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±6 V

Continuous Drain Current (Note 3)

Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

1.38

0.89

A

Pulsed Drain Current (Note 4)

I

DM

3 A

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 3)

P

D

530 mW

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 3) R

θJA

235 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

TOP VIEW

ESD PROTECTED TO 2kV

BOTTOM VIEW

S

1

D

1

D

2

S

2

G

1

G

2

DMG1024UV

Document number: DS31974 Rev. 5 - 2

2 of 6

www.diodes.com

April 2010

DMG1024UV

NEW PRODUCT

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= 25°C I

DSS

- - 100 nA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - ±1.0 μA

V

GS

= ±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS

(

th

)

0.5 - 1.0 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

-

0.3 0.45

Ω

V

GS

= 4.5V, I

D

= 600mA

0.4 0.6

V

GS

= 2.5V, I

D

= 500mA

0.5 0.75

V

GS

= 1.8V, I

D

= 350mA

- 9

V

GS

= 1.7V, I

D

= 140mA

- 10

V

GS

= 1.5V, I

D

= 100mA

Forward Transfer Admittance

|Y

fs

|

- 1.4 - S

V

DS

= 10V, I

D

= 400mA

Diode Forward Voltage

V

SD

0.7 1.2 V

V

GS

= 0V, I

S

= 150mA

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

C

iss

- 60.67 -

pF

V

DS

= 16V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 9.68 -

pF

Reverse Transfer Capacitance

C

rss

- 5.37 -

pF

Total Gate Charge

Q

g

- 736.6 -

pC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 250mA

Gate-Source Charge

Q

g

s

- 93.6 -

pC

Gate-Drain Charge

Q

g

d

- 116.6 -

pC

Turn-On Delay Time

t

D

(

on

)

-

5.1

- ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 47Ω, R

G

= 10Ω,

I

D

= 200mA

Turn-On Rise Time

t

r

-

7.4

- ns

Turn-Off Delay Time

t

D

(

off

)

-

26.7

- ns

Turn-Off Fall Time

t

f

-

12.3

- ns

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

0

0.3

0.6

0.9

1.2

1.5

012345

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.2V

GS

V = 1.5V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 8.0V

GS

0

0.3

0.6

0.9

1.2

1.5

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

V = 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

DMG1024UV

Document number: DS31974 Rev. 5 - 2

3 of 6

www.diodes.com

April 2010

DMG1024UV

NEW PRODUCT

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 0.3 0.6 0.9 1.2 1.5

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 1.8V

GS

V = 4.5V

GS

V = 2.5V

GS

0

0.1

0.2

0.3

0.4

0.5

0.6

0 0.3 0.6 0.9 1.2 1.5

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

0

0.2

0.4

0.6

0.8

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

I = 1.0A

GS

D

V = 2.5V

I = 500mA

GS

D

0

0.4

0.8

1.2

1.6

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

I = 250µA

D

0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

0

2

4

6

8

10

I, S

O

U

R

C

E

C

U

R

E

N

T

(A)

S

T = 25°C

A

DMG1024UV-7

DMG1024UV-7

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