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VS-6CVH02-M3/I

P1-P3P4-P6P7-P7
VS-6CVH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-May-17
1
Document Number: 96087
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyper Fast Rectifier, 2 x 3 A FRED Pt
®
FEATURES
• Hyper fast recovery time
• 175 °C operating junction temperature
• Low forward voltage drop reduced Q
rr
and soft
recovery
• Low leakage current
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Polyimide passivation for high reliability standard
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyper fast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package SlimDPAK (TO-252AE)
I
F(AV)
2 x 3 A
V
R
200 V
V
F
at I
F
0.75 V
t
rr
(typ.) 20 ns
T
J
max. 175 °C
Diode variation Common cathode
Base
common
cathode
Common
cathode
2
4
1
3
Anode Anode
1
2
3
SlimDPAK (TO-252AE)
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per leg
I
F(AV)
Total device, rated V
R
, T
C
= 166 °C
3
Aper device 6
Non-repetitive peak surge current per leg I
FSM
70
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 3 A - 0.9 1.04
I
F
= 3 A, T
J
= 150 °C - 0.75 0.82
I
F
= 6 A - 1 1.2
I
F
= 6 A, T
J
= 150 °C - 0.85 1.01
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - - 80
Junction capacitance C
T
V
R
= 200 V - 12 - pF
VS-6CVH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-May-17
2
Document Number: 96087
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
The heat generated must be less than thermal conductivity from junction to ambient; dP
D
/dT
J
< 1R
thJA
(2)
Free air, mounted or recommended copper pad area; thermal resistance R
thJA
- junction to ambient
(3)
Mounted on infinite heatsink
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 20 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
RR
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 3 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-17-
T
J
= 125 °C - 26 -
Peak recovery current I
RRM
T
J
= 25 °C - 1.8 - A
T
J
= 125 °C - 3.2 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 15 - nC
T
J
= 125 °C - 41 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-55 - 175 °C
Thermal resistance, junction to ambient R
thJA
(1)(2)
-7590°C/W
Thermal resistance, junction to case, per leg R
thJC
(3)
-3.24°C/W
Marking device Case style SlimDPAK (TO-252AE) 6CVH02
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= -40 °C
0.001
0.01
0.1
1
10
100
0 25 50 75 100 125 150 175 200
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
25 °C
125 °C
150 °C
175 °C
VS-6CVH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 04-May-17
3
Document Number: 96087
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
10
100
0 25 50 75 100 125 150 175 200
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
thJC
- Thermal Impedance (°C/W)
t
1
- Rectangular Pulse Duration (s)
DC
Z
thJC
Z
thJA
0
20
40
60
80
100
120
140
160
180
00.511.522.533.5
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
R
thJC
= 3.2 °C/W
See note
(1)
DC
R
thJA
= 75 °C/W
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
00.511.522.533.544.55
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
P1-P3P4-P6P7-P7

VS-6CVH02-M3/I

Mfr. #:
Buy VS-6CVH02-M3/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200V 6A SlimDPAK Fred
Lifecycle:
New from this manufacturer.
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