TSM2314CX RFG Datasheet TSM2314CX RFG | P1-P3

TSM2314

20V N-Channel MOSFET

Document Number:

DS_P0000056 1

Version: E15

SOT

-

23

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(mΩ) I

D

(A)

20

33 @ V

GS

= 4.5V 4.9

40 @ V

GS

= 2.5V 4.4

100 @ V

GS

= 1.8V 2.9

Features

● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

Application

● Load Switch

● PA Switch

Ordering Information

Part No. Package

Packing

TSM2314CX RFG

SOT-23 3Kpcs / 7” Reel

Note: “G” denotes Halogen Free Product.

Absolute Maximum Rating

(Ta = 25

o

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

20 V

Gate-Source Voltage V

GS

±12 V

Continuous Drain Current, V

GS

@4.5V. I

D

4.9 A

Pulsed Drain Current, V

GS

@4.5V I

DM

15 A

Continuous Source Current (Diode Conduction)

a,b

I

S

1.0 A

Maximum Power Dissipation

Ta = 25

o

C

P

D

1.25

W

Ta = 75

o

C 0.8

Operating Junction Temperature T

J

+150 °C

Operating Junction and Storage Temperature Range T

J

, T

STG

-55 to +150 °C

Thermal Performance

Parameter Symbol Limit Unit

Junction to Case Thermal Resistance RӨ

JC

75

°C/W

Junction to Ambient Thermal Resistance (PCB mounted) RӨ

JA

120 °C/W

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 5 sec.

Block Diagram

N-Channel MOSFET

Pin Definition:

1. Gate

2. Source

3. Drain

TSM2314

20V N-Channel MOSFET

Document Number:

DS_P0000056 2

Version: E15

Electrical Specifications

(Ta = 25

o

C unless otherwise noted)

Parameter Conditions Symbol

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

GS

= 0V, I

D

= 250µA BV

DSS

20 -- -- V

Gate Threshold Voltage V

DS

= V

GS

, I

D

= 250µA V

GS(TH)

0.6 0.85 1.2 V

Gate Body Leakage V

GS

= ±4.5V, V

DS

= 0V I

GSS

-- -- ±1.5 µA

Zero Gate Voltage Drain Current V

DS

= 16V, V

GS

= 0V I

DSS

-- -- 1.0 µA

On-State Drain Current V

DS

≥

10V, V

GS

= 4.5V I

D(ON)

15 -- -- A

Drain-Source On-State Resistance

V

GS

= 4.5V, I

D

= 4.9A

R

DS(ON)

-- 27 33

mΩ V

GS

= 2.5V, I

D

= 4.4A -- 33 40

V

GS

= 1.8V, I

D

= 2.9A -- 80 100

Forward Transconductance V

DS

= 15V, I

D

= 5.0A g

fs

-- 40 -- S

Diode Forward Voltage I

S

= 1.0A, V

GS

= 0V V

SD

-- 0.8 1.2 V

Dynamic

b

Total Gate Charge

V

DS

= 10V, I

D

= 5.0A,

V

GS

= 4.5V

Q

g

-- 11 14

nC

Gate-Source Charge Q

gs

-- 1.5 --

Gate-Drain Charge Q

gd

-- 2.1 --

Input Capacitance

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

C

iss

-- 900 --

pF

Output Capacitance C

oss

-- 140 --

Reverse Transfer Capacitance C

rss

-- 100 --

Switching

c

Turn-On Delay Time

V

DD

= 10V, R

L

= 10Ω,

I

D

= 1A, V

GEN

= 4.5V,

R

G

= 6Ω

t

d(on)

-- 0.53 0.8

nS

Turn-On Rise Time t

r

-- 1.4 2.2

Turn-Off Delay Time t

d(off)

-- 13.5 20

Turn-Off Fall Time t

f

-- 5.9 9

Notes:

a. pulse test: PW

≤

300µS, duty cycle

≤

2%

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

TSM2314

20V N-Channel MOSFET

Document Number:

DS_P0000056 3

Version: E15

Electrical Characteristics Curve

(Ta = 25

\o

C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

TSM2314CX RFG

TSM2314CX RFG

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