2004 Oct 11 3
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC636 −−45 V
BC638 −−60 V
BC640 −−100 V
V
CEO
collector-emitter voltage open base
BC636 −−45 V
BC638 −−60 V
BC640 −−80 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−1A
I
CM
peak collector current −−1.5 A
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 150 K/W
