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MMSZ12ET1

P1-P3P4-P6
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1 Publication Order Number:
MMSZ2V4ET1/D
MMSZxxxET1G Series,
SZMMSZxxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Specification Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ T
L
25C
P
pk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
L
= 75C
Derated above 75C
P
D
500
6.7
mW
mW/C
Thermal Resistance, Junction−to−Ambient
(Note 3)
R
q
JA
340 C/W
Thermal Resistance, Junction−to−Lead
(Note 3)
R
q
JL
150 C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
MMSZxxxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZxxxET3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
xxx = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
SZMMSZxxxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
xxx MG
G
1
MMSZxxxET1G Series, SZMMSZxxxET1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless
otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Device*
Device
Marking
V
Z1
(V)
(Notes 4 and 5)
Z
ZT1
(Note 6)
V
Z2
(V)
(Notes 4 and 5)
Z
ZT2
(Note 6)
Max Reverse
Leakage Current
@ I
ZT1
= 5 mA @ I
ZT2
= 1 mA I
R
@ V
R
Min Nom Max
W
Min Max
W mA
V
MMSZ2V4ET1G
MMSZ2V7ET1G
MMSZ3V0ET1G
MMSZ3V3ET1G
MMSZ3V6ET1G
CL1
CL2
CL3
CL4
CL5
2.28
2.57
2.85
3.14
3.42
2.4
2.7
3.0
3.3
3.6
2.52
2.84
3.15
3.47
3.78
100
100
95
95
90
1.7
1.9
2.1
2.3
2.7
2.1
2.4
2.7
2.9
3.3
600
600
600
600
600
50
20
10
5
5
1
1
1
1
1
MMSZ3V9ET1G
MMSZ4V3ET1G
MMSZ4V7ET1G
MMSZ5V1ET1G
MMSZ5V6ET1G
CL6
CL7
CL8
CL9
CM1
3.71
4.09
4.47
4.85
5.32
3.9
4.3
4.7
5.1
5.6
4.10
4.52
4.94
5.36
5.88
90
90
80
60
40
2.9
3.3
3.7
4.2
4.8
3.5
4.0
4.7
5.3
6.0
600
600
500
480
400
3
3
3
2
1
1
1
2
2
2
MMSZ6V2ET1G
MMSZ6V8ET1G
MMSZ7V5ET1G
MMSZ8V2ET1G
MMSZ9V1ET1G
CM2
CM3
CM4
CM5
CM6
5.89
6.46
7.13
7.79
8.65
6.2
6.8
7.5
8.2
9.1
6.51
7.14
7.88
8.61
9.56
10
15
15
15
15
5.6
6.3
6.9
7.6
8.4
6.6
7.2
7.9
8.7
9.6
150
80
80
80
100
3
2
1
0.7
0.5
4
4
5
5
6
MMSZ10ET1G
MMSZ11ET1G
MMSZ12ET1G
MMSZ13ET1G
MMSZ15ET1G
CM7
CM8
CM9
CN1
CN2
9.50
10.45
11.40
12.35
14.25
10
11
12
13
15
10.50
11.55
12.60
13.65
15.75
20
20
25
30
30
9.3
10.2
11.2
12.3
13.7
10.6
11.6
12.7
14.0
15.5
150
150
150
170
200
0.2
0.1
0.1
0.1
0.05
7
8
8
8
10.5
MMSZ16ET1G
MMSZ18ET1G
MMSZ20ET1G
MMSZ22ET1G
MMSZ24ET1G
CN3
CN4
CN5
CN6
CN7
15.20
17.10
19.00
20.90
22.80
16
18
20
22
24
16.80
18.90
21.00
23.10
25.20
40
45
55
55
70
15.2
16.7
18.7
20.7
22.7
17.0
19.0
21.1
23.2
25.5
200
225
225
250
250
0.05
0.05
0.05
0.05
0.05
11.2
12.6
14
15.4
16.8
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
I
Z(AC)
= 0.1 I
Z(DC),
with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
MMSZxxxET1G Series, SZMMSZxxxET1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Device*
Device
Marking
V
Z1
(V)
(Notes 7 and 8)
Z
ZT1
(Note 9)
V
Z2
(V)
(Notes 7 and 8)
Z
ZT2
(Note 9)
Max Reverse
Leakage Current
@ I
ZT1
= 2 mA @ I
ZT2
= 0.1 mA
@ I
ZT2
=
0.5 mA
I
R
@ V
R
Min Nom Max
W
Min Max
W mA
V
MMSZ27ET1G
MMSZ30ET1G
MMSZ33ET1G
MMSZ36ET1G
MMSZ39ET1G
CN8
CN9
CP1
CP2
CP3
25.65
28.50
31.35
34.20
37.05
27
30
33
36
39
28.35
31.50
34.65
37.80
40.95
80
80
80
90
130
25
27.8
30.8
33.8
36.7
28.9
32
35
38
41
300
300
325
350
350
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
MMSZ43ET1G
MMSZ47ET1G
MMSZ51ET1G
MMSZ56ET1G
CP4
CP5
CP6
CP7
40.85
44.65
48.45
53.20
43
47
51
56
45.15
49.35
53.55
58.80
150
170
180
200
39.7
43.7
47.6
51.5
46
50
54
60
375
375
400
425
0.05
0.05
0.05
0.05
30.1
32.9
35.7
39.2
7. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
I
Z(AC)
= 0.1 I
Z(DC),
with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
*Include SZ-prefix devices where applicable.
P1-P3P4-P6

MMSZ12ET1

Mfr. #:
Buy MMSZ12ET1
Manufacturer:
ON Semiconductor
Description:
DIODE ZENER 12V 500MW SOD123
Lifecycle:
New from this manufacturer.
Delivery:
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