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AMMC-5023-W50

P1-P3P4-P6P7-P9
AMMC-5023
23 GHz Low Noise Amplier (21.2– 26.5 GHz)
Data Sheet
Description
Avago’s AMMC-5023 is a high gain, low noise amplier
that operates from 21 GHz to over 30 GHz. By eliminating
the complex tuning and assembly processes typically
required by hybrid (discrete-FET) ampliers, the AMMC-
5023 is a cost-eective alternative in both 21.2–23.6 GHz
and 24.5–26.5 GHz communications receivers. The device
has good input and output match to 50 Ohm and is un-
conditionally stable to more than 40 GHz. The backside
of the chip is both RF and DC ground. This helps simplify
the assembly process and reduces assembly related per-
formance variations and costs. It is fabricated in a PHEMT
process to provide exceptional noise and gain perfor-
mance.
For improved reliability and moisture protection,
the die is passivated at the active areas.
Features
• Frequency range: 21.2–26.5 GHz
• High gain: 23 dB
• Low noise gure: 2.3 dB
•
Input and output return loss: >10 dB
• Single supply bias: 5 volts, 28 mA
• Optional bias adjust
Applications
• Digital Radio Communication Systems (21.2–23.6 GHz
and 24.5–26.5 GHz)
• Any narrow band application within 21–26 GHz
• 24.1 GHz collision avoidance
• Front-end gain stage
Absolute Maximum Ratings
[1]
Symbol Parameters/Conditions Units Min. Max.
V
D1
, V
D2
Drain Supply Voltage V 8
V
G1
, V
G2
Gate Supply Voltage V 0.4 2
I
D1
Drain Supply Current mA 35
I
D2
Drain Supply Current mA 35
P
in
RF Input Power dBm 15
T
ch
Channel Temperature °C +150
T
b
Operating Backside Temperature °C -55 +140
T
stg
Storage Temperature °C -65 +165
T
max
Max. Assembly Temp (60 sec max) °C +300
Notes:
1. Absolute maximum ratings for continuous operation unless otherwise noted.
Chip Size: 1880 x 600 µm (74 x 23.6 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils), or larger
2
AMMC-5023 DC Specications/Physical Properties
[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
V
D1
, V
D2
Recommended Drain Supply Voltage V 3 5 7
V
G1
, V
G2
Gate Supply Voltage
[2]
V 0.8
(V
D1
≤ V
D1(max)
, V
D2
≤ V
D2(max)
)
I
D1
, I
D2
Input and Output Stage Drain Supply Current mA 14
(V
G1
= V
G2
= Open, V
D1
= V
D2
= 5 V)
I
D1
+I
D2
Total Drain Supply Current mA 13 28 35
(V
G1
= V
G2
= Open, V
D1
= V
D2
= 5 V)
θ
ch-b
Thermal Resistance
[3]
(Backside temperature, T
b
= 25°C) °C/W 44
Notes:
1. Backside ambient operating temperature T
A
= 25°C unless otherwise noted.
2. Open circuit voltage at V
G1
and
V
G2
when
V
D1
and V
D2
are 5 Volts.
3. Channel-to-backside Thermal Resistance (θ
ch-b
) = 66°C/W at T
channel
(T
c
) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (T
b
) = 25°C calculated from measured data.
RF Specications
[4]
(V
G1
= V
G2
= Open, V
D1
= V
D2
= 5V, I
D1
+ I
D2
= 28 mA, Z
in
= Z
0
= 50Ω)
21.2–23.6 GHz 24.5–26.5 GHz
Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.
|S
21
|
2
Small-signal Gain dB 21 23.6 28 17 19 25
∆|S
21
|
2
Small-signal Gain Flatness dB ±1.5 ±1.2
RL
in
Input Return Loss dB 10 12 10 11.5
RL
out
Output Return Loss dB 9 12 10 17
|S
12
|
2
Isolation dB 40 50 40 43
P
-1dB
Output Power @ 1 dB Gain Compression dBm 9.5 10
f = 23 GHz
P
sat
Saturated Output Power dBm 10.5 11.5
(@ 3 dB Gain Compression)
OIP3 Output 3
rd
Order Intercept Point, 22.4 GHz dB 18
Rf
in1
= Rf
in2
= -20 dBm, ∆f = 2 MHz 25.5 GHz 24
NF Noise Figure 22 GHz dB 2.3 2.8
25 GHz 2.3 2.8
Note:
4. 100% on-wafer RF test is done at frequency = 21.2, 22.4, 23.6, 24.5, 25.5 and 26.5 GHz, except as noted.
3
AMMC-5023 Typical Performance
(T
chuck
= 25°C, V
D1
= V
D2
= 5V, V
G1
= V
G2
= Open, Z
0
= 50Ω)
Figure 1. Gain.
FREQUENCY (GHz)
GAIN (dB)
18 2820 22 24 26
30
25
20
15
10
5
0
Figure 2. Isolation.
FREQUENCY (GHz)
ISOLATION (dB)
18 2820 22 24 26
70
60
50
40
30
20
10
0
Figure 3. Input Return Loss.
FREQUENCY (GHz)
RLin (dB)
18 2820 22 24 26
0
-5
-10
-15
-20
-25
-30
Figure 4. Output Return Loss.
FREQUENCY (GHz)
RLout (dB)
18 2820 22 24 26
0
-5
-10
-15
-20
Figure 5. Noise Figure.
FREQUENCY (GHz)
NOISE FIGURE (dB)
18 2820 22 24 26
5
4
3
2
1
0
Figure 6. Output Power at 1dB Gain
Compression.
FREQUENCY (GHz)
P-1dB (dBm)
18 2820 22 24 26
12
9
6
3
0
P1-P3P4-P6P7-P9

AMMC-5023-W50

Mfr. #:
Buy AMMC-5023-W50
Manufacturer:
Broadcom / Avago
Description:
IC RF AMP 21.2GHZ-26.5GHZ
Lifecycle:
New from this manufacturer.
Delivery:
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